2SJ3001 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
www.kexin.com.cn 1 MOSFETSMD Type P-Channel MOSFET 2SJ3001 1.Gate 2.Drain 3.Source 4.Drain 1.80 (max) 0.02 ~ 0.1 4.60 (typ) 10b 7.0±0.3 3.50±0.2 6.50±0.2 3.00±0.1 2.30 (typ) SOT-223 Unit:mm 1 2 3 0.250 Gauge Plane 0.84 (max) 0.75 (min) D D SGG Ƶ Absolute Maximum Ratings TC = 25ć unless otherwise noted. Symbol Rating Unit VDS -200 VGS ±30 TC=25ć -0.67 TC=70ć -0.53 Pulsed Drain Current (Note1) I DM -2.7 Single Pulsed Avalanche Energy (Note2) E AS 150 mJ Avalanche Current (Note1) I AR -0.67 A Repetitive Avalanche Energy (Note1) E AR 0.25 mJ Peak Diode Recovery dv/dt dv/dt -5.5 V/ns TC=25ć 2.5 W - Derate above 25°C 0.02 W/ć RthJA 50 TJ 150 Tstg -55 to 150 TL 300 Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 , Starting TJ = 25°C 3. ISD İ -2.8A, di/dt İ 300A/μs, VDD İ BVDSS, Starting TJ = 25°C Junction Temperature Storage Temperature Range ć/W Thermal Resistance.Junction- to-Ambient ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V A Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds ID PD Power Dissipation Ƶ Features ƽ -0.67 A, -200 V, RDS(on) = 2.7ȍ (Max.) @ VGS = -10V, ID = -0.335 A ƽ Low Gate Charge ( Typ. 6.0 nC) ƽ Low Crss ( Typ. 7.5 pF)
www.kexin.com.cn2 MOSFETSMD Type P-Channel MOSFET 2SJ3001 Ƶ Electrical Characteristics TC = 25ć unless otherwise noted. Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS ID = -250ȝA, VGS = 0V -200 V Breakdown Voltage Temperature Coefficient ¨BVDSS/ ¨TJ ID = -250 μA, Referenced to 25°C -0.18 V/ć VDS= -200V, VGS = 0V -1 VDS= -160V, TC = 125°C -10 Gate-Body Leakage Current I GSS VDS = 0V, VGS = ±30V ±100 nA Gate Threshold Voltage V GS(th) VDS = VGS , ID = -250ȝA -3.0 -5.0 V Static Drain-Source On-Resistance R DS(On) VGS = -10V, ID = -0.335A 2.7 ȍ Forward Transconductance g FS VDS = -40V, ID = -0.335A 0.2 S Input Capacitance C iss 190 250 Output Capacitance C oss 45 60 Reverse Transfer Capacitance C rss 7.5 10 Total Gate Charge Q g 6.0 8.0 Gate Source Charge Q gs 1.7 Gate Drain Charge Q gd 2.9 Turn-On DelayTime t d(on) 8.5 25 Turn-On Rise Time t r 35 80 Turn-Off DelayTime t d(off) 12 35 Turn-Off Fall Time t f 25 60 Maximum Body-Diode Continuous Current I S -0.67 Source Current Pulsed I SM -2.7 Diode Forward Voltage V SD IS = -0.67A,VGS = 0V -5.0 V Reverse Recovery Time t rr 100 ns Reverse Recovery Charge Q rr 0.34 ȝC Notes: 4. Essentially independent of operating temperature VGS = 0V , IS = -2.8A, dIF/dt = 100A/ȝs ȝA VDS = -25V, VGS=0V, f = 1MHz Zero Gate Voltage Drain Current I DSS VDS = -160V, ID = -2.8A VGS = -10V (Note 4) A ns VDD = -100V, ID = -2.8A RG = 25ȍ (Note 4) pF nC Ƶ Marking Marking J3001
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms