2SJ288 SANYO
Document overview
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Technical content
Features
+ Low ON resistance. + Very high-speed switching. - Low-voltage drive. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss —60 Vv Gate to Source Voltage Vess +15 v Drain Current(DC) Ip -—500 mA Drain Current(Pulse) Ipp PWS 10s, duty cycleS1% -2 A Allowable Power Dissipation Pp T.= 25°C 35 W Mounted on ceramic board 13° =4W (250mm? X 0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Vesrypss Ip=—1mA,Vgs=0 —60 Vv Zero Gate Voltage Ipss Vps= —60V,Vgs=0 -100 yA Drain Current Gate to Source Leakage Current Igsg Vos= £12V,Vps=0 +10 pA Cutoff Voltage Vesom Vps=—10V,Ip=—-—1mA -10 —2.0 v Forward Transfer Admittance |Y¥g| Vpg=—10V,Ip=—250mA 240 400 © mS (Sasi Drain to Source Rpson) Ip=—250mA,Vgs= —10V 2.2 3.0 fe) on State Resistance Rpscon) In=—250mA,Vgg= —4V 3.0 4.0 a Input Capacitance Ciss Vps= ~ 20V,f=1MHz 45 pF Output Capacitance Coss Vps= — 20V,f= 1MHz 20 pF Reverse Transfer Capacitance Crgg Vps= — 20V,f= 1MHz 5 pF Turn-ON Delay Time tacon) See specified Test Circuit. 7 ns Rise Time ty ” 10 ns Turn-OFF Delay Time ta(om ” 35 ns Fall Time te % 20 ns Diode Forward Voltage Vsp Is= —500mA,Vgg=0 -1 v Marking : JE Switching Time Test Circuit Package Dimensions 2062 Vpo~-30v (unit : mm) vin 45 1s, vin PLeazoa BL E Gh) se OL a ill PG ce} 3.0" 0. © 1G 2suzes S: Source D: Drain G: Gate SANYO! PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 31893TH (KOTO) AX-8897 No.4308-1/3
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Pp — T; Pp - Te “J D SS 60) D— Te au RET TPT) ae EP ET TT am; STING Ca C4 a : h po PCCNECTT gt 2 3 pe] TR To & & Gos % go tt NT ET # °S, A290 a Ie, pa Bos ras 5s Pan Ei [ tt ® sg—_ 11 1 AUT i g een <b, Fon S%, gos IN z-{ | | | Xx] ep <= 4 IN % a i NS O20 40 60 80 1 20 KOC ee OS eww ee Ambient Temperature,T, —°C Case Temperature,T, — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept {ull responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and fitigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. MH Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.4308-3/3