2SJ288_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSF ET P-Channel MOSFET 2SJ288 ■ Features
- VDS (V) =-60V
- ID =-0.5 A
- RDS(ON) ＜ 3Ω (VGS =-10V)
- RDS(ON) ＜ 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±15 Continuous Drain Current ID -0.5 Pulsed Drain Current (Note.1) IDM -2 3.5 1.3 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Power Dissipation ℃ PD W V A Note.1: PW ≤ 10 us, duty cycle ≤ 1% Tc = 25 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-1mA, VGS=0V -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -100 uA Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±10 uA Gate to Source Cutoff Voltage VGS(off) VGS=-10V ID=-1mA -1 -2 V VGS=-10V, ID=-250mA 3 VGS=-4V, ID=-250mA 4 Forward Transconductance gFS VDS=-10V, ID=-250mA 240 400 mS Input Capacitance Ciss 45 Output Capacitance Coss 20 Reverse Transfer Capacitance Crss 5 Turn-On DelayTime td(on) 7 Turn-On Rise Time tr 10 Turn-Off DelayTime td(off) 35 Turn-Off Fall Time tf 20 Diode Forward Voltage VSD IS=-0.5A,VGS=0V -1 V nsSee Speaified Test circuit VGS=0V, VDS=-20V, f=1MHz Static Drain-Source On-Resistance RDS(On) Ω pF ■ Marking Marking JE
www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ288 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ288 ■ Typical Characterisitics