2SJ281 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Low ON resistance. - Very high-speed switching. + Low-voltage drive. Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Vpss —250 v Gate to Source Voltage Voss £30 Vv Drain Current(DC) Ip -3 A Drain Current(Pulse) Ipp PWS 10s, duty cycleS1% -12 A Allowable Power Dissipation Pp 1.0 WwW Te=25°C 30 WwW Channel Temperature Tch 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Visrypss Ip= —1mA,Vgs=0 —250 Vv G-S Breakdown Voltage Varess Ig=+100A,Vpg=0 +30 v Zero Gate Voltage Ipss Vps= — 250V,Vgs=0 -100 pA Drain Current Gate to Source Leakage Current Igsg Vag = +25V,Vps=0 +10 pA Cutoff Voltage Vesem Vpos=—10V,Ip=—1mA -15 2.5 v Forward Transfer Admittance l¥gl Vpgs=—-10V,Ip=~—1.5A 15 2.5 Ss Static Drain to Source Rpson) Ip=—1.5A,Vgs= —-10V 1.5 2.0 2 on State Resistance Input Capacitance Ciss Vps= ~ 20V,f=1MHz 420 pF Output Capacitance Coss Vps= — 20V,f=1MHz 100 pF Reverse Transfer Capacitance Crss Vps= — 20V,f=1MHz 40 pF Continued on next page. Package Dimensions 2083A Package Dimensions 2092A (unit : mm) (unit : mm) 6.5. 2-3, so ,|2 ple =! Ea 4 . () fo [i Mii 0“s—TPt EA fle eernay (a? on at és] 2 mas G : Gate D: Drain Gos Gs Gute 8 : Source FEF] De Drain SANYO: TP-FA S : Source 23->4-$-<-23 SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 02093TH (KOTO) BX-0706 No.4243-1/3,
Continued from preceding page. min typ max unit Turn-ON Delay Time taton) See specified Test Circuit. 14 ns Rise Time ty a 18 ns Turn-OFF Delay Time tacom % 15 ns Fall Time tr * 65 ns Diode Forward Voltage Vsp Ig=—3A,Vgs=0 -10 -15 v Switching Time Test Circuit Voo=-s00v ow ? -soy UP Ips-1.54 vin FL =66.70 Pwatone ole Voor D.C, S1x Ex © asue0t Ib - Vps Ip - Ves 3 45N s
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20 Rps(on) - Te Ciss, Coss, Crss - Vps
Tp==16A a U my q s AST fee zg 6 9S ie BR; 2.0 fi J Biss > Sg WT 83 nea ot PRS ee 28 10 | ay i a | ga" é 7 KOS 23 a a aes es a | 889 “40 oO 40 80 120 160 0 -20 _ 740 60 -60 100 ‘120 Case Temperature,Tc — °C Drain to Source Voltage, Vp — V 2 sWTime - Ip 2 ASO +] . Dae | ee SS < OBC NSN Jf | [4 pw ee a oo E qq we 2 TT SSN A Mamie Lo Ene Py Sap St A eto ims rt £ t 5 re | oe ee a eget ttt] Ter 3 Cece ¥ Pee te EA Orerationin his areata PSL £ ol £4 pre 2 ft tty Ty “os ety “osen | | Ni a 'Vpp= —100V aa LT gTe=25°c_] Vos=—10v_ | | | | [| Singlepulse | TT TTT 01 be 1.0 10 =10 7100 Drain Current Ip — A Drain to Source Voltage, Vs - V Pp - Ta - . Ww D 2 Po Te zee—-AT TT TTT 1 10 | 28 tS NI ua 4 fi [XT tT ACNE gt} g NX 3 Sos si go | NT TTT a & FL LN L] POON fos ea 5 tI . RL | | Ne TT] og. eT TT NX eee 2 28 3 3 z NJ =i.) i | | tN] 6 20 0 Ca 8 oO 20 40 160 0 20 40 60 80 100 120 140 160 Ambient Temperature,Ta ~°C Case ‘Temperature,Te — °C WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.4243-3/3