2SJ276 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Low ON resistance. - Very high-speed switching. + Low-voltage drive. - Surface mount type device making the following possible. - Reduction in the assembling time for 2$J276-applied equipment. - High-density surface mount applications. + Small size of 25J276-applied equipment. Absolute Maximum Ratings at Ta = 25°C unit Drain-to-Source Voltage Vpss -100 v Gate-to-Source Voltage Vass +20 v Drain Current (DC) Ip -8 A Drain Current (Pulse) Ipp PWE10xs, duty cycleS1% ~32 A Allowable Power Dissipation Pp 1.65 WwW Te=25°C 60 Ww Channel Temperature Tch 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Visrpss Ip= —1mA,Vgg=0 100 Vv G-S Breakdown Voltage Visricss Ig= £100uA,Vps=0 £20 v Zero-Gate Voltage Ipss Vps= —100V,Vgs=0 -100 pA Drain Current Gate-to-Source Leakage Current Igsg Ves= t16V,Vps=0 £10 pA Gate-to-Source Cutoff Voltage Veggom Vps=—10V,Ip=—1mA -1.0 -2.0 V Forward Transfer Admittance | ¥g1 Vps=-10V,Ip=-4A 3.5 6.5 Ss Static Drain-to-Source Rpsion) Ip=—4A,Vgg= —10V 0.22 03 2 ON-State Resistance Rpson) Ip=—-4A,Vgs=—4V 03 404 0 Continued on next page. Switching Time Test Circuit Package Dimensions 2090A Vpp2-50V (unit: mm) vin ° 0. Sos, toy UF pe-4a p> Vin AL 42.50 Do. Sax BE —* Your : : o | J Pe <i) 08 Mi 2 Us 24 G) 2sue76 ° 1: Gate 2: Drain 3: Source .! SANYO: SMP-FD SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 11195TS (KOTO) BX-1179 No.4749-1/3
Continued from preceding page. min typ max unit Input Capacitance Ciss Vps= —20V, f=1MHz 1230 pF Output Capacitance Coss Vps= —20V, f=1MHz 260 pF Reverse Transfer Capacitance Crss Vps= —20V, f=1MHz 50 pF Turn-ON Delay Time tatori) See specified Test Circuit. 16 ns Rise Time tr a 27 ns Turn-OFF Delay Time taco ” 200 ns Fall Time tr ia 100 ns Diode Forward Voltage Vsp Is=—8A,Vgg=0 -10 -15 V - Ip _- Ves 6 2S > Vos “16 D Gs a a Va J || Lh _3.6V 4 < 12 Y = < 12) Vk
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: STOTT | | tN] ol IN i a 0 0m © 60 80 WO 20 “0 160 Ambient Temperature,Ta —°C Case Temperature,Te — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees, jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.4749-3/3