2SJ258 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

+ Low ON resistance. - Very high-speed switching. - Low-voltage drive. - Surface mount type device making the following possible - Reduction in the assembling time for 25J258-applied equipment : High-density surface mount applications + Small size of 25J258-applied equipment Absolute Maximum Ratings at Ta= 25°C unit Drain-to-Source Voltage Vpss —30 v Gate-to-Source Voltage Vass +20 Vv Drain Current(DC) Ip ~-12 A Drain Current(Pulse) Ipp PWS 10uxs, duty cycleS 1% —48 A Allowable Power Dissipation Pp 1.65 W Te=25°C 60 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Visrypss Ip=—1mA,Vgs=0 —30 v G-S Breakdown Voltage Visrocss Ig= +100uA,Vpg=0 +20 Vv [ Zero-Gate Voltage Ipss Vps= —30V,Vgs=0 -100 pA Drain Current Gate-to-Source Leakage Current Igsg Vos= £16V,Vps=0 £10 yA Cutoff Voltage Vosm Vps=—10V,Ip=—1mA -1.0 -20 V Forward Transfer Admittance | ¥s,! Vpg=—10V,Ip=—6A 5 8 Ss [ Static Drain-to-Source Rpsion) Ip=—6A,Vgs=—10V. 0.070.095 ON-State Resistance Rpsion) Ip=—6A,Vgg=—4V 0.095 0.13 Input Capacitance Ciss Vps= — 10V,f=1MHz 1300 pr Output Capacitance Coss Vps= —10V,f=1MHz 780 pF Reverse Transfer Capacitance Crss Vps= —10V,f=1MHz 290 pF Turn-ON Delay Time tacon) See specified Test Circuit. 16 ns Rise Time tr ” 60 ns Turn-OFF Delay Time taco ” 300 ns Fall Time te ” 250 ns Diode Forward Voltage Vsp Ig= —12A,Vgg=0 -1.0 -15 V Switching Time Test Circuit Package Dimensions 2090A vope- (unit : mm) . po=-15v -s0¥ 3p=-6A van AL a2.50 po EH 2 43 ve 2: Drain ‘8:Source Farr} SANYO: SMP-FD SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 11195TS (KOTO) BX-1176 No.4745-1/3

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wm | [| | fy A 0 2 4 -6 8 10 [c} a -2 3 6 5 ~6 Drain-to-Source Voltage,Vps — V Gate-to-Source Voltage, Vas -— V L¥is | - Ip Ros(on) - Ves res” ie — Sg Ip=—6A| Tu ee | ee) SC Zan 3 mae ae BE N -aeeZ a LN || CZ SS 7 ee PLP 5 Bz : eT tT Te & 1.0) 3.0 30 a a) Drain Currently — A Gate-to-Source Voltage, Vgs — V

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“TTTILLLL ve ao \\ + 60] . eAPN fa th] ETT E aan a” P i et PINT TTT B12 — = IN a Me 2% Ni : ‘ a4 | EIN YT 3 Nia! 5 30 IN “ x po | tT INT TT a < IN aol E TEN TI Ge : 3 a go po ET INT AJIT ENG y i Sb PTOREEC ISS CO DT RO 0 0 40 60 8 MO WO “40 160 Ambient Temperature,Ta —°C Case Temperature,Te — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.4745-3/3