2SJ257

2SJ257 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

Features

+ Low ON resistance. - Very high-speed switching. - Low-voltage drive. - Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 25J257-applied equipment. - High density surface mount applications. + Small size of 28J257-applied equipment. . Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vpss -30 v Gate to Source Voltage Voss £15 v Drain Current(DC) Ip -10 A Drain Current(Pulse) Ipp PWS 10zs, duty cycleS 1% —40 A Allowable Power Dissipation Pp 1.65 Ww T,= 25°C 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Visrypss Ip= —1mA,Vgs=0 -30 v G-S Breakdown Voltage Visrcss I¢=+100uA,Vps=0 £15 Vv [Zen Gate Voltage Ipss Vps= — 30V,Vgg=0 —100 pA Drain Current Gate to Source Leakage Current Iggg Vos= £12V,Vps=0 +10 pA Cutoff Voltage Vesom Vos=—10V,Ip=—1mA -1.0 -20 V Forward Transfer Admittance | ¥g] Vps=—10V,Ip=—5A 4 65 Ss (Sic Drain to Source Rpson) Ip=—5A,Vgs=—10V 85 120 mo on State Resistance Rpsion) Ip=—5A,Vgs=—4V 120 170 mo Continued on next page. Package Dimensions 2093 Package Dimensions 2090 {unit : mm) a (unit : mm) a 0 al | TI . 0. 7 m4 ost a eos D: Drain S : Source G : Gate SANYO: SMP-FD ly D: Drain § : Source SANYO: SMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 51193TH (KOTO) AX-8376 No.4242-1/3

28)257 SSMS Continued from preceding page. min typ max. unit Input Capacitance Ciss Vps= —10V,f=1MHz 1000 pF Output Capacitance Coss Vps= —10V,f=1MHz 600 pF Reverse Transfer Capacitance Cygg Vps= —10V,f=1MHz 220 pF Turn-ON Delay Time tacon) See specified Test Circuit. 15 ns Rise Time t. * 80 ns Turn-OFF Delay Time tacom 2 120 ns Fall Time tr ” 170 ns Diode Forward Voltage Vsp Is= —10A,Vgs=0 -10 -15 Vv Switching Time Test Circuit Vop=-1sv ov'ar j -10¥ Ip--54 vin AL =3.00 pe. sax | of —* Your as © 2sue67

20 Ip_- Vos -20 7 Ip = Ves Y

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ozs Rps(on)_- Te 5 Ciss, Coss, Crss_- Vos . Tp= A NS A OO SV jo oN te g wre Bors Z| ss gen ee as SR ee 38 2 Co Be < Qo 2 J ee Cd a A a3 — | aa a a &'3°° -— i A 3 a a a ° eS SS CS -80 40 oO 40 80 120 160 0 “4 -8 12 =16 -20 -24 ~28 Case Temperature,T, — °C Drain to Source Voltage, Vps — V sWTime - Ip ASO ee pe ee OO ae TSS 1—| 2 |) SEES < | SCP — 0 ee ee & 10 a a ee 3 weep TP NDR TN By L Por rae a a ce 0 PCE :? aS a oa © 2 Operation in this area is aN = z E -tit Tt Trt Z jo|_limitedtyfosen | | | |_| 3 | Eh | i a ee Se a OO qreaarc_ | [ tT Tt TT | gy [pp Singlepulso | [7 [| tt | =1.0 =10 =1.0 =10 Drain Current,Ip — A Drain to Source Voltage, Vps — V

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So 0.4) S f N <9 : pak < o! ms 0 , ws oe 7 ee 0 20 40 60 60 10 120 160 160 Ambient Temperature,T, —°C Case Temperature,T, — °C MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.4242-3/3