2SJ233 SANYO
Document overview
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Technical content
Features
+ Low ON resistance. - Very high-speed switching. + Low-voltage drive. + Its height onboard is 9.5mm. + Meets radial taping. Absolute Maximum Ratings at Ta= 25°C unit, Drain to Source Voltage Vpss -100 v Gate to Source Voltage Voss £15 v Drain Current(DC) Ip -18 A Drain Current(Pulse) Ipp PWS 10ys, duty cycleS1% -7.2 A Allowable Power Dissipation Pp 15 WwW Channel Temperature Tch 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Viarypss Ip=—1mA,Vgs=0 -100 v G-S Breakdown Voltage Visress Ig= +100u4,Vps=0 +15 Vv | Zero Gate Voltage Ipss Vps= —100V,Vgs=0 -100 pA Drain Current Gate to Source Leakage Current Iggs Ves= £12V,Vps=0 £10 pA Cutoff Voltage Vaso Vps=—10V,Ip=~—imA -1.0 ~2.0 v Forward Transfer Admittance | Yg| = Vpg=—-10V,Ip=-1A 18 28 Ss [Biase Drain to Source Rpsoon) + Ip=—1A,Vgs=—10V 0.3 0.4 a on State Resistance Rpson) Ip=—1A,Vgs= —4V 0.4 0.55 a Input Capacitance Ciss Vps= —20V,f=1MHz 950 pF Output Capacitance Coss Vps= —20V,f= 1MHz 200 pF Reverse Transfer Capacitance Crsg Vps= —20V,f= 1MHz 40 pF Turn-ON Delay Time tacon) See specified Test Circuit. 15 ns Rise Time tr % 22 ns Turn-OFF Delay Time tacom ” 110 ns Fall Time ty * 70 ns Diode Forward Voltage Vsp Is=-1.8A,Vgs=0 -1.0 -1. Vv Switching Time Test Circuit Package Dimensions 2085 ’ (unit : mm) -}—22—4 1.9 van Yoo=-sev ay U Ips-4a d win AL =500 ol 2 1.2 | 0.5 Po Ge 0s : uae S: Source G: Gote 2 ae ee SANYO: FLP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 31893MH (KOTO) A8-7975 No.3818-1/3
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2 LJ ; 94 ICS =
- i I Ng = |-—| | = a [- Cp Cee [Pee SS = = 24 -26 -3: i = 16 age.Vig = V re Tdoucvs Voltage, Ds m o = Drain to So ASO = 320, | ae ae pt Temperature. — °C “Tet cae 0 “o it Tempe! 5 AD SS Be) Ambient Ten e_ = Ip =—e0v pie | TT me ; SW Tim |_| Nop=—50v ese ae iat = _ FE See Ne aa [| | 6-10 cos == a Po s ; ais ane. an “Sed =H | ars Ret aim z L PSS] H in {| é in inthis rene - Seueee E A Lt [| a i Sie i He | | nt sara : e See het | [Baas a renee | Zy See reeeeee see ra elie [1 ! ° eH tt 2 = ° 710 -A iain ar * rain Gieratity _
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114 I\\ . a éJ | K[ TT Tt CCON 31.0 a a fo | | IN TTT a TI INCL £06 goal | i i | Noy PEEEECRSTS < “COTTE < 0 N\\ 0 20 40 60 80 10 120 140 160 Ambient Temperature,T, - °C @ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shal! ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. : No.3818-3/3