2SJ232 SANYO

Document overview

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Technical content

Features

  • Low ON resistance. - Very high-speed switching. - Low-voltage drive. + Its height onboard is 9.5mm. + Meets radial taping. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss —100 Vv Gate to Source Voltage Voss £15 v Drain Current(DC) Ip -12 A Drain Current(Pulse) Ipp PWS 10ugs, duty cycleS 1% -48 A Allowable Power Dissipation Pp 1.6 WwW Channel Temperature Tch 150 °c Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Voesrypss Ip=~—1mA,Vgs=0 —100 v G-S Breakdown Voltage Vesryess Ig= £100%A,Vps=0 £15 v [Fee Gate Voltage Ipss Vps= —100V,Vgg=0 -100 yA Drain Current Gate to Source Leakage Current Igsg Voes= £12V,Vps=0 +10 yA Cutoff Voltage Vesom Vos=—-10V,Ip=—1mA -1.0 2.0 Vv Forward Transfer Admittance | Ys, | =Vps=—10V,Ip=—600mA 0.9 1.6 s (si Drain to Source Rpson) Ip=—600mA,Vgg= —10V 0.7 0.95 a on State Resistance Rpson) Ip=—600mA,Vgs= -4V 0.95 13 a2 Input Capacitance Ciss Vps= — 20V,f=1MHz 380 pF Output Capacitance Coss Vps= — 20V,f=1MHz 100 pr Reverse Transfer Capacitance Cregg Vps= — 20V,f=1MHz 20 pF Turn-ON Delay Time taion) See specified Test Circuit. 12 ns Rise Time tr ” 14 ns Turn-OFF Delay Time tarom % 85 ns Fall Time te ” 40 ns Diode Forward Voltage Vsp Is=-1.2A,Vgs=0 -1.0 -1.5 v Switching Time Test Circuit Package Dimensions 2085 : (unit : mm) F—24—_+ 13 Yoo=-#ov vin soy 1p*-600m4 4 vin RL +830 2 °| G) 1.2 [ts 0.5 eo os 5 © SS asuea2 $56 G: Gate 2 a - SANYO: FLP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 31893MH (KOTO) A8-7974 No.3817-1/3

25 Ip _ = Vps 0 Ip - Vas

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2 Ros(on) - Ta Ciss, Coss: Crss_— Vos

1 SE A DS OC NN |

;OOCCT SRE brs 2 eee ee el rT [id 2 bbis 2 i ee 83 gL IN OTe EE aq | a sa ee 0-8 —— g J tT TSX Bao oi to | ir ° a SS OY SOO (ON -80 40 oO 40 BO 120 160 Oo -4 -6 -12 -16 -20 -24 -26 -32 Ambient Temperature,T, — °C Drain to Source Voltage, Vps - V SWTime ~- Ip ASO 3, 7 Vpp= —50V stTpp TT TTT Te % [| * a} — EP Noor aro N Ne MOOSE Sore] tobPAT TTT Nee NT ett NOT! no wet NIT Te NTT = 4 rn a 3 APRESS a a | | Pes | tN NIT EET Et Poperation SQ, HS ze |] REET eee Nett LY Oe oa = 4 eS & He 4 eee tt FN rT TT eafsinsiewuse | TT TTT TTS 04 JS 74.0 5Ty0 2 FS 79 FF 5 7m 2 3 Drain CurrentIp — A Drain to Source Voliage,Vp3 — V No.3817-2/3

2$J232

1.6 Po = Ta

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0 20°40 60 80 «10 120 40 160 Ambient Temperature,T, — °C IB No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including oircuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3817-3/3