2SJ231 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Small ON resistance. - Very high-speed switching. - Low-voltage drive. - Meets radial taping. Absolute Maximum Ratings at Ta= 25°C. unit Drain to Source Voltage Voss -100 Vv Gate to Source Voltage Vass £15 Vv Drain Current (DC) Ip -0.5 A Drain Current (Pulse) Ipp PW 10zs, duty cycleS1% -2 A Allowable Power Dissipation Pp 1 Ww Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Verpss Ip=—1mA, Ves=0 —100 Vv Zero Gate Voltage Drain Current Ipss Vps= —100V, Ves=0 -100 pA Gate to Source Leakage Current Igss Veg= +12V, Vps=0 +10 pA Cutoff Current Vastof Vps= —10V, Ip=—1mA -1.0 2.0 Vv Forward Transfer Admittance | Vg! Vps= —10V, Ip= —250mA 400 700 mS Static Drain to Source Rpsion) Ip=—250mA, Vgs= —10V 18 2.4 a on State Resistance Rpston) Ip=—250mA, Vgg=—4V 24 3.5 a Input Capacitance Ciss Vps= —20V, f=1MHz 160 pF Output Capacitance Coss Vps= — 20V, f= 1MHz 40 pF Reverse Transfer Capacitance (Crsg Vps= — 20V, f=1MHz 6 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 10 ns Rise Time tr * 12 ns Turn-OFF Delay Time tarot + 80 ns Fall Time te 4 40 ns Diode Forward Voltage Vsp Is= —500mA, Vgg=0 -0.9 Vv Switching Time Test Circuit Package Dimensions 2087 25 (unit : mm) 45, Vop=-50v “1 69 1.0 ~sov U Ip=-250mA —= vin AL =2000 «| el bie. Sak of—e Your \\ - . iL thos Pe ac i A s oD 6 soa s| 28u231 a D: Drain . G: Gate 2.54. 2.54 SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D151MH, (KOTO) A8-7847 No.3816-1/3
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§ Do ee, Jinthisareeis NCO TI] TTT | ee ee ee fas | 2 — ee FOE PN a jee N 4 0.01 Ta=25°C ee ‘Drain to Souree Voltage; Vog — V. © Drain to Soures Voltage, Vps — V me Wetec og VC mintoBoureeVolinge Vos Vv No.3816-2/3
-_Ta 1.2 Po 21.0 oe SEERNEEES Fy 0.6 RN x 3 \\ © 0.6 ry ‘ “EET < | ° IN . 0 20 40 60 80 +100 120 140 160 Ambient Temperature, Ta — °C WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Ml Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3816-3/3