2SJ228 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Small ON resistance. - Very high-speed switching. - Low-voltage drive. + Meets radial taping. Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Vpss -60 Vv Gate to Source Voltage Vass £15 Vv Drain Current (DC) Ip -0.8 A Drain Current (Pulse) Ipp PWS 10zs, duty cycleS 1% -3.2 A Allowable Power Dissipation Pp 1 WwW Channel Temperature Tech 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Verpss Ip=-—1mA, Vgs=0 60 Vv Zero Gate Voltage Drain Current Ipgg Vps= —60V, Vag=0 -100 pA Gate to Source Leakage Current Iggg Vos= £12V, Vps=0 +10 yA Cutoff Voltage Vosiom Vps= — 10V, Ip= —1mA -1.0 —2.0 Vv Forward Transfer Admittance 1 Vg! Vps= —10V, Ip= —400mA 05 09 Ss (etic Drain to Source Rpgon) Ip=—400mA, Vgg= —10V 09 12 #2 lon State Resistance Rpsvon) Ip=—400mA, Vgg= —4V 12 16 a Input Capacitance Ciss Vps= — 20V, f= 1MHz 160 pF Output Capacitance Coss Vps= —20V, f= 1MHz 60 pF Reverse Transfer Capacitance Crss Vps= — 20V, f= 1MHz 10 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 10 ns Rise Time tr ” 12 ns Turn-OFF Delay Time ta(ott) + 75 ns Fall Time te % 30 ns Diode Forward Voltage Vsp Is= —800mA, Vag=0 -0.9 v Switching Time Test Circuit Package Dimensions 2087 25 (unit : mm) 1.45, Vpp=-30v 6.9 }.0 vin 9 -soy 0 1p=-400ma — i vin RL #750 o] 9] De. S18 of» Your “| rd - df 0.6 Ast i cy ~ 500 s| 28u228 . Goof tah S: Source D: Drain G: Gate a 54 SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . D151MH, (KOTO) A8-7846 No.3813-1/3
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| = i ) “10 a 2), a <i see PER RTT 8 N\\ 1 epee SD Pi RN 8 IN eo fhe 308 ~ i forte SNE AE E Zinthisareais oti 1H] Bose . Zojtimiettytonw [Re |i tt |: PoP TN g TPT & 0.4 & Soo so 2 NX PEP NE Eo \\ 1 ta= | | IN 3°? sani TT Single e oor yee? a 0 IN 71.0 ~10 -100 f) 20 40 60 80 10 120 «6140 160 Drain to Source Voltage, Vps — V Ambient Temperature, Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. ™@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and ail claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. . No.3813-3/3