2SJ226 SANYO

Document overview

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Technical content

Features

  • Low ON resistance. + Very high-speed switching. - Low-voltage drive. + Its height onboard is 9.5mm. - Meets radial taping. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss 30 Vv Gate to Source Voltage Voss £15 v Drain Current(DC) Ip -2 A Drain Current(Pulse) Ipp PWS 10s, duty cycleS 1% 8 A Allowable Power Dissipation Pp 15° #W Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Vaarpss Ip=—1mA,Vgs=0 —30 v G-S Breakdown Voltage Vipryass Ig= +100uA,Vps=0 £15 v (tere Gate Voltage Ipss Vps= -30V,Vgs=0 -100 pA Drain Current Gate to Source Leakage Current Igss Vas= £12V,Vps=0 £10 pA Cutoff Voltage Vesom Vps=—10V,Ip=—1mA -10 -2.0 Vv Forward Transfer Admittance | ¥| Vps=—10V,Ip=—1A 12 2 Ss | Static Drain to Source Rpson) Ip=—1A,Vgs=—10V 0.2 0.3 2 on State Resistance Rpsoon) Ip=—1A,Vgs=—-4V 0.3 0.45 fe} Input Capacitance Ciss Vps= —10V,f=1MHz 400 pF Output Capacitance Coss Vps= —10V,f=1MHz 280 pF Reverse Transfer Capacitance Crs Vps= —10V,f=1MHz 110 pF Turn-ON Delay Time tacon) See specified Test Circuit. 12 ns Rise Time te ” 25 ns Turn-OFF Delay Time taom ” 105 ns Fall Time te + 15 ns Diode Forward Voltage Vsp Ig= —2A,Vgs=0 ~1.0 -1.5 Vv Switching Time Test Circuit Package Dimensions 2085 (unit: mm) F=24_4 1.9 Yoo=-19v evap 4) ae rors el 5 bre. Six Bf —= Your 1.2 0.8 . Ps = S: Source C; Gate ~ a ~ SANYO: FLP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41293YK (KOTO) 8-7975 No.3811-1/3

Ip _- Vos : Ip _- Vas ff oe) TT = 3.5 < —s ot + 4 J an or a Bafa red eT td | | 20 fv oeus iio ee] EO A |) rev - Drain to Source Voltage, Vps — V Gate to Source Voltage,Vgs — V nwo 07 Ros(on) ~ Ves ttt ft tty yp pee)

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s CPA #3 [J g ec oe i g Eli | |] it df at tt i | ft Drain Current,lp — A Gate to Source Voltage,Vgs — V Ros(on) ~ Ta Ciss, Coss: Crss_ ~ Vos 80.5 fe toe fee, eat | | | , RSS ete Bg 04 4 2 SN ee ee ee ee a5 | | td Gumi St ft $3 03 — 4 fe Die, ee Bo | | Sa te =40 0 %0 60 720160 0-4-8 7216-20 2552 Ambient Temperature,T, — °C Drain to Source Voltage, Vps — V swTime - Ip 2 ASO Vpp=-15V. et [| SEN OE 2 | EEE] 6; BSE ON & Rot tom Fe Va OS “COTES 3 TN Bo Pees 7 ~ A a i pri PUTT ee 3 Sos & 3 _ S| Operation S04, rf ft] 2 71] Lp Pe [| § J [Vinthisareais “7 ef] a /{Et7 [1 }| 8 tmited bY Rose) | A] =: -01 = an cee a a Bingtepue “Ol Drain Currently — A Drain to Source Voltage,Vps — V No.3811-2/3

16 Pp = Ta

Fe -_RITT TT TT ary) aN SCONE a ~ SCONCE 3 1,0 N 3 1 go | | IN | [| . Fo | 1 | IN = s E06 é a Ne Fo | | tT | tT NG Boz IN < -i | | |] Tis. 0 20 20 60 80 10 120 1 160 Ambient Temperature,T, — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. MW Anyone purchasing any products described or contained herein for an above-mentioned use shall: @® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and cirovit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3811-3/3