2SJ225 SANYO

Document overview

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Technical content

Features

+ Small ON resistance. + Very high-speed switching. + Low-voltage drive. + Meets radial taping. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vpss -30 Vv Gate to Source Voltage Voss £15 v Drain Current (DC) Ip -1 A Drain Current (Pulse) Ipp PWS 10ys, duty cycleS 1% -4 A Allowable Power Dissipation Pp 1 WwW Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Visrypss In=—1mA, Vgs=0 -30 Vv Zero Gate Voltage Drain Current Ipgg Vps= —30V, Ves=0 -100) pA Gate to Source Leakage Current Igsg Ves= £12V, Vps=0 £10) pA Cutoff Voltage Vesom Vos=—10V,Ip=—1mA -1.0 —2.0 Vv Forward Transfer Admittance 1 Vg! Vps= —10V, Ip= —500mA 0.6 1.0 Ss [Static Drain to Source Rps(on) Ip= —500mA, Vgg= —10V 0.5 0.75 a on State Resistance Rpsvon) Ip= —500mA, Vas= —4V 0.75 11 a Input Capacitance Ciss Vps= — 10V, f= 1MHz 170 pF Output Capacitance Coss Vps= —10V, f=1MHz 110 pF Reverse Transfer Capacitance Crss Vps= — 10V, f=1MHz 20 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 10 ns Rise Time tr a 13 ns Turn-OFF Delay Time tacoff) e 70 ns Fall Time te 4 30 ns Diode Forward Voltage Vsp Is=—14A, Veg=9. -0.9 Vv Switching Time Test Circuit Package Dimensions 2087 as (unit : mm) 145, Voo*-15V 6.9 }.0 vin w10y 1ps-500mA re Vin AL ~30a | Gi eters o. —e Vout “| — i D.C. $ 4x Fay. |. PG s 0 6 0.45 o soa S| 28u2e5 ” @: Gate : 2.56 254 SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D151MH, (KOTO) 8-7845 No.3810-1/3

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40 ASO 12 Pp _- Ta

; Ss A . sine —} fF +f 5 ——— oo fi eae GON 1 ile € byoene | | tT PN | foe S = StS a 8s gt/y Neer rer —_ Boel E Loperation Naot | | TT ae y © Jinthisarenis Ce ee es 3 IN 4 limited by Qi, z Soe ey Te TP ee NX “yt NS) s +t -}— 4} SS Bor N ee ST a0 10 °0 20406080 1012040160 Drain to Source Voltage, Vps — V Ambient Temperature, Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and ail claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3810-3/3