2SJ211-3 KEXIN

Document overview

www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ211 ■ Features

VDS (V) =-100V
ID =-0.2 A
RDS(ON) ＜ 20Ω (VGS =-10V)
RDS(ON) ＜ 30Ω (VGS =-4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -0.2 Pulsed Drain Current (Note.1) IDM -0.4 Power Dissipation PD 0.2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10 ms, duty cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -100 V Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±10 uA Gate to Source Cutoff Voltage VGS(off) VGS=-5V ID=-1mA -1.4 -2.4 V VGS=-10V, ID=-10mA 20 VGS=-4V, ID=-10mA 30 Forward Transconductance gFS VDS=-5V, ID=-10mA 20 45 mS Input Capacitance Ciss 27 Output Capacitance Coss 16 Reverse Transfer Capacitance Crss 2 Turn-On DelayTime td(on) 110 Turn-On Rise Time tr 150 Turn-Off DelayTime td(off) 160 Turn-Off Fall Time tf 150 ns VGS(on)=-4V, ID=-10mA, RL=500Ω,RG=10 Ω,VDD=-5V, VGS=0V, VDS=-5V, f=1MHz Static Drain-Source On-Resistance RDS(On) Ω pF ■ Marking Marking H18 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1. Gate 2. Source 3. Drain

www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ211 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ211 ■ Typical Characterisitics