2SJ210-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSF ET P-Channel MOSFET 2SJ210 ■ Features
- VDS (V) =-60V
- ID =-200m A
- RDS(ON) ＜ 10Ω (VGS =-10V)
- RDS(ON) ＜ 15Ω (VGS =-4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -200 Pulsed Drain Current (Note.1) IDM -400 Power Dissipation PD 200 mW Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±1 uA Gate Cut off Voltage VGS(off) VDS=-5V,ID=-1uA -1.4 -2.4 V VGS=-4V, ID=-10mA 15 VGS=-10V, ID=-10mA 10 Forward Transconductance gFS VDS=-5V, ID=-10mA 20 45 mS Input Capacitance Ciss 27 Output Capacitance Coss 21 Reverse Transfer Capacitance Crss 3 Turn-On DelayTime td(on) 120 Turn-On Rise Time tr 190 Turn-Off DelayTime td(off) 150 Turn-Off Fall Time tf 180 pF Static Drain-Source On-Resistance RDS(On) Ω VGS(on)=-4V, VDS=-5V, ID=-10mA, RL=500Ω,RGEN=10Ω ns VGS=0V, VDS=-5V, f=1MHz ■ Marking Marking H16 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ210 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ210 ■ Typical Characterisitics