2SJ209-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ209 ■ Features
- VDS (V) =-100V
- ID =-0.1 A
- RDS(ON) ＜ 60Ω (VGS =-10V)
- RDS(ON) ＜ 100Ω (VGS =-4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±16 Continuous Drain Current ID -0.1 Pulsed Drain Current (Note.1) IDM -0.2 Power Dissipation PD 0.2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10 ms, duty cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -100 V Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±16V ±10 uA Gate to Source Cutoff Voltage VGS(off) VGS=-5V ID=-1mA -1.5 -2.5 V VGS=-10V, ID=-10mA 60 VGS=-4V, ID=-10mA 100 Forward Transconductance gFS VDS=-5V, ID=-10mA 15 22 mS Input Capacitance Ciss 17 Output Capacitance Coss 9 Reverse Transfer Capacitance Crss 1 Turn-On DelayTime td(on) 45 Turn-On Rise Time tr 75 Turn-Off DelayTime td(off) 25 Turn-Off Fall Time tf 80 ns VGS(on)=-4V, ID=-10mA, RL=500Ω,RG=10 Ω,VDD=-5V, VGS=0V, VDS=-5V, f=1MHz Static Drain-Source On-Resistance RDS(On) Ω pF ■ Marking Marking H17 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1. Gate 2. Source 3. Drain
www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ209 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ209 ■ Typical Characterisitics