2SJ203-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ203 ■ Features
- VDS (V) =-16V
- ID =-200m A
- RDS(ON) ＜ 23Ω (VGS =-2.5V)
- RDS(ON) ＜ 10Ω (VGS =-4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -16 Gate-Source Voltage VGS ±7 Continuous Drain Current ID -200 Pulsed Drain Current (Note.1) IDM -400 Power Dissipation PD 200 mW Junction Temperature TJ 150 Operating Temperature Topt -55 to 80 Junction Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -16 V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±3V ±10 uA Gate Cut off Voltage VGS(off) VDS=-3V,ID=-1uA -1.2 -2.2 V VGS=-2.5V, ID=-1mA 23 VGS=-4V, ID=-1mA 10 Forward Transconductance gFS VDS=-3V, ID=-10mA 20 48 mS Input Capacitance Ciss 28 Output Capacitance Coss 32 Reverse Transfer Capacitance Crss 6 Turn-On DelayTime td(on) 180 Turn-On Rise Time tr 420 Turn-Off DelayTime td(off) 100 Turn-Off Fall Time tf 200 pF Static Drain-Source On-Resistance RDS(On) Ω VGS(on)=-3V, VDS=-3V, ID=-10mA, RL=300Ω,RGEN=10Ω ns VGS=0V, VDS=-3V, f=1MHz ■ Marking Marking H14 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ203 ■ Typical Characterisitics
www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ203 ■ Typical Characterisitics