2SJ195 SANYO
Document overview
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- PDF pages: 3
Technical content
Features
+ Low ON resistance. + Very high-speed switching. + Low-voltage drive, Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss —100 v Gate to Source Voltage Voss +15 v Drain Current(DC) Ip -4 A Drain Current(Pulse) Ipp PWS 10zs, duty cycleS1% -16 A Allowable Power Dissipation Pp T.= 25°C 30 WwW Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Visrypss _Ip= —1mA,Vgg=0 —100 Vv G-S Breakdown Voltage Visryoss Ig= +100nA,Vpg=0 #15 Vv | Zero Gate Voltage Ipss Vps= — 100V,Vgg=0 -100 pA Drain Current Gate to Source Leakage Current Igsg Voes= £12V,Vps=0 +10 pA Cutoff Voltage Vesom Vps=—10V,Ip=—1mA -10 —2.0 v Forward Transfer Admittance | ¥g | Vps=—10V,Ip=—-2A 2.5 4 Ss [Static Drain to Source Rpston) Ip=—2A,Vgs=—10V 03 04 «2 on State Resistance Rpson) Ip=—2A,Ves=-4V 0.4 0.55 fe} Input Capacitance Ciss Vps= —20V,f=1MHz 950 pF Output Capacitance Coss Vps= —20V,f=1MHz 200 pF Reverse Transfer Capacitance Cygg Vps= — 20V,f=1MHz 40 pF Turn-ON Delay Time tacon) See specified Test Circuit. 15 ns Rise Time tr ” 25 ns Turn-OFF Delay Time taom a 90 ns Fall Time te o 70 ns Diode Forward Voltage Vsp Igs=—4A,Vgs=0 -10 -1.5 v Switching Time Test Circuit Package Dimensions 2083A Package Dimensions 2092A (unit : mm) (unit: mm) __ ov: " ‘ 00st . | ne a 00st in: oye 5 S, 4 a aren re a: 05 ost. a t G : Gate pay D : Drain S$ : Source S : Source 2a+-+—-b-23 sanyo : TP SANYO : TP-FA ; SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 42693TH (KOTO) 8-7546,7921 No.3768-1/3
253195 . “10 ID - Vos - Ib - Ves Vps=—10V || f= 1 | | eff 3-6 yy 7 3-5 fae POOCP a A 2 7 A a 0 =2 -6 -6 -8 710 % Pal 2 2 -h 5 6 Drain to Source Voltage,Vps — V Gate to Source Voltage, Vas — V » 1¥ts 1 = Io Rps(on)_— Vas BN — i} 1 Ip=—2A 2 10 ce D. TSS A ED ¢¢ ff UT pe Bo bs ee Ao | ON aa | AA ae 1 PU Ao io | | in, oe = 8 PtH TH Pt ft = a 1 1.0 = 10 % -2 4 -6 8 . 0 W uw Drain CurrentIp — A Gate to Source Voltage, Vgs — V on Roston) ~ Te — 5 Ciss) Coss Crss_- Vos — oan 7 Woe Z 0.5 NS ew gS fT ge a 4 = IN Se, Egou Ne L _—, a a BS 38 TT H yy oN a | 33 a] a a ee ae Se | 830.2 — S ee ee | || a a SO ed ne | al aS ey SS NS AOS DN B80 -40 0 40 80 120 160 0 -h “8 “12-16 “20 “2% 2B -32 Case Temperature,T, — °C Drain to Source Voltage, Vps — V sw Time - Ip ASO CL ee Te Voge -10V Ree
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2 ee Fa a > 3 | ae TE | aT rr N_] ee tee tt | 4H T= 25" HoH ey asco | PE TTT Drain Current,Ip — A “ Drain to Source Voltage, Ving - V No.3768-2/3
Pp - . of pt rath | NX ef [KP] TT ¢ 2% PoON & 20 gf tT IN. TT pee TT NT 5 2 PCCCPPR pie PN 3 ¢ N NS % 2040-60 160 . Case Temperature,T, — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products desoribed or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and ail claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or ‘implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3768-3/3