2SJ192 SANYO

Document overview

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Technical content

Features

+ Low ON resistance. - Very high-speed switching. + Low-voltage drive. Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Vpss -60 Vv Gate to Source Voltage Voss £15 Vv Drain Current(DC) Ip -4 A Drain Current(Pulse) Ipp PWS 10ys, duty cycleS 1% -16 A Allowable Power Dissipation Pp Tp = 25°C 30 OW Channel Temperature Tech 150 °C Storage Temperature Tstg ~55to+150 °C Electrical Characteristics at Ta= 25°C min typ max = unit D-S Breakdown Voltage Visrypss Ip=—1mA,Vgs=0 -60 v G-S Breakdown Voltage Viarnass Ig=+100/A,Vps=0 +15 Vv [ere Gate Voltage Ipss Vps= —60V,Vgs=0 -100 pA Drain Current Gate to Source Leakage Current Igss Vos= £12V,Vps=0 +10 yA Cutoff Voltage Vesom Vps=—10V,Ip=—1mA -1.0 —2.0 Vv Forward Transfer Admittance l¥is1 Vps=—10V,lp=—2A 2.5 4 Ss {Static Drain to Source Rpson) Ip=—2A,Vgs=—10V 015 02 2 lon State Resistance Rpsion) Ip=—2A,Ves=—4V 0.2 0.27 a2 Input Capacitance Ciss Vps= —20V,f=1MHz 950 pF Output Capacitance Coss Vps= —20V,f=1MHz 300 pF Reverse Transfer Capacitance Crgg Vps= —20V,f=1MHz 15 pF ‘Turn-ON Delay Time tdon) See specified Test Circuit 15 ns Rise Time ty o 35 ns Turn-OFF Delay Time ta(om) ia 115 ns Fall Time ity a 95 ns Diode Forward Voltage Vsp Is= —4A,Vgs=0 -10 -1.5 Vv Switching Time Test Circuit Package Dimensions 2083A Package Dimensions 2092A (unit : mm) (unit : mm) vs Yp0=-30v 65 2.3, a5 zs . 4 5 — 4 : “ov |eoe [eal as : os . 4 o) Zsas $hajLos ont : G : Gate foo D: Drain S : Source $ : Source SANYO : TP-FA zat+ 23 sanyo: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41293TH (KOTO) 8-7543,7921 No.3765-1/3

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1 GSE | (| eon LOSS

a [Ty er TT ae tee Rosen _ Ar | : ‘ pH Fs === eee ee es attr Ht | Ce Peake SS oS eS eee ee = = Ez =1,0 =1 = iat Drain Currently — A 0 Drain to Source Voltage,Vps - V ' . No.3765-2/3

ee SSSSSSSSSSSSSSSSSSsSSSSSSSSSSSSSSSSSSSSSSeee Pp - T, 3- 2 eM RT] 1 1 1 28 NI a a = % No got {NTT TT IN S 20 s a. lt IN | a py | IN B 12 F oon Ne 2a ‘ PLiET Ty a ol IN 0 aD 40 60 80 100 120° 40 160 Case Temperature,T, — °C W No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3765-3/3