2SJ190 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Low ON resistance + Very high-speed switching . + Low-voltage drive Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Voss —60 v Gate to Source Voltage Vass +15 Vv Drain Current (DC) Ip -1 A Drain Current (Pulse) Ipp PWS 10gs, duty cycleS1% —4 A Allowable Power Dissipation Pp (rics 25°C 3.5 W Mounted on ceramic board 15° #W (250mm*x 0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit D-S Breakdown Voltage Vierypss Ip=—1mA, Vgs=0 —60 Vv [ere Gate Voltage Drain Ipss Vps= ~60V, Veg=0 ~100 pA Current Gate to Source Leakage Current Igsg Vos= +12V, Vps=0 £10 uA Cutoff Voltage Vestn Vps= —10V,In=—1mA -1.0 —2.0 Vv ‘Forward Transfer Admittance | Vig! Vps= -10V, Ip= —500mA 06 1.0 S (Stasie Drain to Source Rpswon) Ip=—500mA, Vgg= -10V 09 12 £2 on State Resistance Rpsoon) Ip=—500mA, Ves=—4V 1.2 16 a Input Capacitance Ciss Vps= —20V, f=1MHz 160 pF Output Capacitance Coss Vps= —20V, f=1MHz 60 pF Reverse Transfer Capacitance Cregg Vps= —20V, f=1MHz 10 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 10 ns Rise Time tr % 13 ns Turn-OFF Delay Time taom % 70 ns Fall Time te * 30 ns Diode Forward Voltage Vsp Ig= —1A, Ves=0- -0.9 Vv Switching Time Test Circuit Package Dimensions 2062 vie Vpo=~30¥ (unit : mm) Ls ° 1s gv Tp =-S00mA psc] Vin AL =600 NS \\c ; PG a od Soo rae = 3.0: 0.6 Ato S: Source G: Gate SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N1292MH (KOTO) A8-7541'No.3763-1/3 |
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25)190 SSS ASO Po - Ta ore 08 67 Pr SS Bist-—ny [eT OND NaN ar) % ? Wi aw ER <b tL EN | Sa Ne, 1. : 0, 2 be Mae gL A ET <2 Operation in Sia ST Zn.9) Ney é i R, Nee, 20.8 P soit ot TT NU es % Boo Ef | | TT Re TT a es ee ee TIS er Noe. eae | | Tt | tt Boe rope Singepus a tT N = a0 0 2040608060 Drain to Source Voltage, Vps — V Ambient Temperature,Ta — °C Pp - Te 4.0 Pitt tt tt 13s] ; Esq N = + 2.0 p gi 1 IN | | | | Bos fot | IN, | ft # 20 i | |_| Bis Ey || | Bho q tT tT - a i) IN $b a Case Temperature, Te — °C HM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products desoribed or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, : No.3763-3/3