2SJ187 SANYO
Document overview
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Technical content
Features
+ Low ON resistance + Very high-speed switching - Low-voltage drive Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss -30 Vv Gate to Source Voltage Vass £15 v Drain Current (DC). Ip -1 A Drain Current (Pulse) Ipp PWS 1Ozs, duty cycleS1% -4 A Allowable Power Dissipation Pp T= 25°C 3.5 WwW Mounted on ceramic board 1.5 WwW (250mm? x 0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Vesrypss Ip=—1mA, Ves=0 -30 Vv (Zero Gate Voltage Drain Ipss Vps= —30V, Vgs=0 -100 pA Current Gate to Source Leakage Current Igss Voas= +12V, Vps=0 +10 yA Cutoff Voltage Vesor Vps=—-10V,Ip=—-1mA —-1.0 -20 V Forward Transfer Admittance, | Ygg1 Vps= —10V, Ip= —500mA 0.6 1.0 s ersic Drain to Source “Rpgon) Ip=—500mA, Vgg= —10V 05 0.75 2 on State Resistance Rpsvon) Ip= —500mA, Vgg= —4V 0.75 11 a Input Capacitance Ciss Vps= —10V, f=1MHz 170 pF Output Capacitance Coss Vps= —10V, f=1MHz 110 pF Reverse Transfer Capacitance Crgs Vps= —10V, f=1MHz 20 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 10 ns Rise Time ty a 13 ns Turn-OFF Delay Time tacom 4 710 ns Fall Time te % 30 ns Diode Forward Voltage - Vsp Ig=—-1A, Vag=0 ~0.9 v Marking : JA . Switching Time Test Circuit Package Dimensions 2062 vin Yoo=-1sv (unit : mm) as 1s toy U Ip=-So0oma pues a Vin AL =300 ae G LE ts] Ps Ls] x EY G@ 3.0 0.0
500 S| 28u167 —o S: Source
G: Gate SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N1292MH (KOTO) X-6951, 7305 No.3509-1/3
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Ea a F ys;-— ae lipp ft TT ry a vel _T Na ee a Co iar % Fc SS a [| pe NSP Xe, | i mR || [Nt py fol oI TTI TT) g,, Cr PRS RSS ETRE ¢ si Tron a ‘ 6, 5 8 0.8) Ce, &_ 3{_ islimited by Rps( on) rst-+4 Sos on pol til | UTE NTT 2.) | TTT Ry tI FR SO a G H er ea mPreer ingle pulse 77-7] 2 rH oH, S95 0 80 0 ic 12 go DraintoSource Voltage, Vps — V Ambient Temperature, Ta — °C Pp ~ Te a TT TT TT TT las ns 3.0) p a Lf tt aa a | E ist SS ET |_| 2 1.0] IN CCC = Bos re NI oat Case Temperature, Te — °C M No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the faiure of which may directly or indirectly cause injury, death or property loss. Mi Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiiates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3509-3/3