2SJ185-3 KEXIN

Document overview

www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ185 ■ Features

VDS (V) =-50V
ID =-0.1 A (VGS =-4V)
RDS(ON) ＜ 20Ω (VGS =-4V)
RDS(ON) ＜ 40Ω (VGS =-2.5V)
Comp;ementary to 2SK1399 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -50 Gate-Source Voltage VGS ±7 Continuous Drain Current ID -100 Pulsed Drain Current (Note.1) IDM -200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Operating Temperature Topt -55 to 80 Junction Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS=±7V ±5 uA Gate Cut off Voltage VGS(off) VDS=-3V,ID=-1uA -1.2 -2 V VGS=-2.5V, ID=-1mA 40 VGS=-4V, ID=-10mA 20 Forward Transconductance gFS VDS=-3V, ID=-10mA 20 42 mS Input Capacitance Ciss 22 Output Capacitance Coss 12 Reverse Transfer Capacitance Crss 4 Turn-On DelayTime td(on) 80 Turn-On Rise Time tr 230 Turn-Off DelayTime td(off) 40 Turn-Off Fall Time tf 70 pF Static Drain-Source On-Resistance RDS(On) Ω VGS(on)=-3V, VDS=-3V, ID=-20mA, RL=150Ω,RGEN=10Ω ns VGS=0V, VDS=-3V, f=1MHz ■ Marking Marking H12 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ185 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ185 ■ Typical Characterisitics