2SJ166-3 KEXIN

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www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ166 ■ Features

VDS (V) =-50V
ID =-0.1 A (VGS =-10V)
RDS(ON) ＜ 50Ω (VGS =-4V)
Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -50 Gate-Source Voltage VGS ±7 Continuous Drain Current ID -100 Pulsed Drain Current (Note.1) IDM -200 Power Dissipation PD 200 mW Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V mA Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS=±7V ±1 uA Gate Cut off Voltage VGS(off) VDS=-5V, ID=-1uA -1 -3 V Static Drain-Source On-Resistance RDS(On) VGS=-4V, ID=-20mA 50 Ω Forward Transconductance gFS VDS=-5V, ID=-20mA 30 50 mS Input Capacitance Ciss 18 Output Capacitance Coss 11 Reverse Transfer Capacitance Crss 3 Turn-On DelayTime td(on) 40 Turn-On Rise Time tr 58 Turn-Off DelayTime td(off) 62 Turn-Off Fall Time tf 62 VGS(on)=-5V, VDS=-5V, ID=-20mA, RL=250Ω,RGEN=10Ω ns VGS=0V, VDS=-5V, f=1MHz pF ■ Marking Marking H11 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ166 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ166 ■ Typical Characterisitics

www.kexin.com.cn4 MOSFE T P-Channel MOSFET 2SJ166 ■ Typical Characterisitics