2SD995 SANYO
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Technical content
SANYO SEMICONDUCTOR © 2sns95 2sp995 NEN Triple Diffused Mesa Type Silicon Transistor For H-Deflection Output with High Voltage (With Damper Diode) Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage VcBo 2500 V Collector to Emitter Voltage VcEo 900 Vv Emitter to Base Voltage VEBO 6 Vv Collector Current I¢ 3 °A Collector Current (peak) icp 7A Collector Dissipation Po 3 WwW Pe Tc=25°C 50 W Junction Temperature T5 150 °C Storage Temperature Tstg 4064150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cut off Current Tors Vop=2500V , VEB=0 1.0 mA Emitter Cut off Current TEBO VpE=4V,Ic=0 40 130 mA Emitter to Base Voitage VEBO Ig=250mA , Ic=0 6.0 Vv Emitter to Collector Voltage Vgco Ip=2A,Ip=0 2.0 v pe Current Gain hre Vep=1l0V,I¢=1.5A 3* 15* C-E Saturation Voltage Veg (sat) ICc=1.5A,Ip=0.5A 5 Vv B-E Saturation Voltage Vpp (sat) Ig=1.5A,Ip=0.5A 1.3 Vv C-E Sustain Voltage Vcg(sus) Ic=100mA,Ip=0,L=35mH 900 Vv Fall Time te Ig=1.5A,Ip=0.6A, t=10 90% 1.0 pS * 2SD995 are classified according to 1.5A hrpg as follows. . 3. Kk 9 5 M 15 Equivalent Circuit Case Outline (UNIT:mm) - ‘ 76 0 . Collector « [— 7*\\\\ 2 : : : Pe} ws i ote J 8 S_ / 8 : a vot Gey 4.9 Emitter . nemumied C: Collector EIAS: TC-3,TB-3 E: Emitter . SEDEC: TO-3 B: Base ee _