2SD973 PANASONIC

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Technical content

2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification n Features l Low collector to emitter saturation voltage VCE(sat). l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 1.5 150 –55 ~ +150 Unit V V V A A W 2SD973 2SD973A 2SD973 2SD973A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 20V , IE = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 500mA*2 V CE = 5V , IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0. f = 1MHz min typ 160 100 0.2 0.85 200 max 0.1 340 0.4 1.2 Unit mA V V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2SD973 2SD973A 2SD973 2SD973A *2 Pulse measurement *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340

Transistor 2SD973, 2SD973A PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB V CER — R BE 0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 1.50 1.25 1.00 0.75 0.50 0.25 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (A) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 600 500 400 300 200 100 Ta=75˚C 25˚C –25˚C VCE =10 Collector current IC (A) Forward current transfer ratio hFE 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 120 100 IC =10mA Ta=25˚C 2SD973A 2SD973 Base to emitter resistance RBE (kW ) Collector to emitter voltage VCER (V)

Transistor 2SD973, 2SD973A ICEO — Ta Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 102 103 104 VCE =10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3

10 Single pulse

Ta=25˚C t=10ms t=1s 2SD973 2SD973A ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)