2SD0968A PANASONIC
Document overview
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Technical content
1Publication date: December 2003 SJC00202DED Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) ■ Features
- High collector-emitter voltage (Base open) VCEO
- Large collector power dissipation PC
- Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C 4.5±0.1 3.0±0.15 45˚ 2.6±0.1 0.4 max. 1.6±0.2 1.5±0.1 4.0 2.5±0.1 +0.25 –0.20 1.0+0.1 12 3 1.5±0.1 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Unit: mm Marking Symbol: V Note) The part numbers in the parenthesis show conventional part number. Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion. Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 120 V Collector-emitter voltage (Base open) V CEO 120 V Emitter-base voltage (Collector open) V EBO 5V Peak collector current I CP 1A Collector current I C 0.5 A Collector power dissipation * PC 1W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = 100 µA, IB = 0 120 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 05V Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 130 330 hFE2 VCE = 5 V, IC = 500 mA 50 Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.6 V Base-emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V Transition frequency f T VCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 20 pF (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank R S hFE1 130 to 220 185 to 330
2 SJC00202DED
10 −3 10 −2 10 −1
10 IC / IB = 10
25°C −25°C Ta = 75°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) PC Ta IC VCE IC IB VCE(sat) IC VBE(sat) IC hFE IC 0 160 40 120 80 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Collector power dissipation PC (W) Ambient temperature Ta (°C) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 Ta = 25°C IB = 20 mA 8 mA 10 mA 12 mA 18 mA 16 mA 14 mA 6 mA 4 mA 2 mA Collector current IC (A) Collector-emitter voltage VCE (V) 01 5 105 1.2 1.0 0.8 0.6 0.4 0.2 VCE = 10 V Ta = 25°C Base current IB (mA) Collector current IC (A) 1 10 100 1 000 10 −2 10 −1 102 IC / IB = 10 Ta = −25°C 25°C 75°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (mA) 1 10 100 1 000 300 250 200 150 100 VCE = 10 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) −1 −10 −100 200 160 120 VCB = 10 V Ta = 25°C Transition frequency fT (MHz) Emitter current IE (mA) 1 10 100 IE = 0 f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) fT IE Cob VCB
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