2SD968 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage 2SD968 100 V 2SD968A 120 V Collector to emitter voltage 2SD968 100 V 2SD968A 120 V Emitter to base voltage V EBO 5V Peak collector current I CP 1A Collector current I C 0.5 A Collector power dissipation P C *1 W Junction temperature T j 150 Storage temperature T stg - 5 5t o1 5 0 * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion VCBO VCEO
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to emitter voltage 2SD968 V CEO IC =1 0 0 ì A ,IB = 0 100 V 2SD968A V CEO IC =1 0 0 ì A ,IB = 0 120 V Emitter to base voltage V EBO IE =1 0 ì A ,IC =0 5 V VCE = 10V, IC = 150mA* 90 220 VCE =5 V ,IC = 500mA* 50 100 Collector to emitter saturation voltage V CE(sat) IC =5 0 0 m A ,IB = 50mA* 0.2 0.6 V Base to emitter saturation voltage V BE(sat) IC =5 0 0 m A ,IB = 50mA* 0.85 1.2 V Transition frequency f T VCB = 10V, IE = -50mA, f = 200MHz 120 MHz Collector output capacitance C ob VCB = 10V, IE = 0, f = 1MHz 11 20 pF * Pulse measurement hFEForward current transfer ratio hFE Classification 2SD968 WQ WR 2SD968A VQ VR QR 90 155 130 220 Marking Symbol Rank hFE 2SD968, 2SD968A