2SB789 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A n Features l High collector to emitter voltage VCEO . l Large collector power dissipation PC . n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –100 –120 –100 –120 –0.5 150 –55 ~ +150 Unit V V V A A W 2SB789 2SB789A 2SB789 2SB789A n Electrical Characteristics (Ta=25˚C) Parameter Collector to emitter voltage Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol V CEO V EBO hFE1 * hFE2 V CE(sat) V BE(sat) fT Cob Conditions IC = –100mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –150mA V CE = –5V , IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –100 –120 typ – 0.2 – 0.85 120 max 220 – 0.6 –1.2 Unit V V V V MHz pF Marking symbol :D (2SB789) E(2SB789A) * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2SB789 2SB789A *hFE1 Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 2SB789 DQ DR 2SB789A EQ ER Marking Symbol
Transistor 2SB789, 2SB789A 0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C –18mA –16mA –14mA –12mA –10mA – 0.8mA – 0.6mA – 0.4mA – 0.2mA IB=–20mA Collector to emitter voltage VCE (V) Collector current IC (A) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 VCE =–10V Ta=25˚C Base current IB (mA ) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 –25˚C Ta=75˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 75˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 600 500 400 300 200 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB