2SD965A JIANGSU

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD 965A TRANSISTOR (NPN) FEA TURES z Audio amplifier z Flash unit of camera z Switching circuit MARKING: 965A MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 30 V V EBO Emitter-Base Voltage 7 V I C Collector Current -Continuous 5 A P C Collector Power Dissipation 750 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =0.1mA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA. I B =0 30 V Emitter-base breakdown voltage V (BR)EBO I E = 10μA, I C =0 7 V Collector cut-off current I CBO V CB = 10V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V, I C =0 0.1 μA h FE(1) V CE = 2 V, I C =1mA 200 h FE’(2) V CE = 2V, I C = 500mA 230 800 DC current gain h FE(3) V CE = 2V, I C =2A 150 Collector-emitter saturation voltage V CE(sat) I C =3A, I B =0.1A 1 V Transition frequency f T V CE =6V, I C =50mA 150 MHz Out capacitance Cob V CB =20 V , I E =0, f=1MH Z 50 pF CLASSIFICATION OF h FE(2) R a n k Q R S Range 230-380 340-600 560-800 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER R θJA Thermal Resistance From Junction To Ambient 167 ℃/W www.cj-elec.com 1www.cj-elec.com C,Oct,2015

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 2www.cj-elec.com C,Oct,2015

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