2SD965A HOTTECH

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Technical content

Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES

  • Audio amplifier
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  • Switching circuit Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-BaseV oltage V CBO 40 V Collector-EmitterV oltage V CEO 30 V Emitter-Base V oltage V EBO 7 V CollectorCurrent-Continuous IC 5 A CollectorPower dissipation PC 0.75 W StorageTemp erature Tstg -55to +150 ELECTRICAL CHARACTERISTICS (@ Ta=25 unless otherwise specified) Parameter Symbol Test conditions M in Typ M ax U nit Collector-base breakdow n voltage V CBO IC =0.1mA, IE=0 40 V Collector-emitter breakdow n voltage V CEO IC = 1mA. IB =0 30 V Emitter-base breakdow n voltage V EBO IE= 10μA, IC =0 7 V Collector cut-off current ICBO V CB = 10V ,IE=0 0.1 μA Emittercut-offcurrent IEBO V EB =7V ,IC =0 0.1 μA DC current gain h FE(1) V CE V I C mA 200 hFE’(2) V CE = 2V ,IC = 500mA 230 800 hFE(3) V CE = 2V ,IC =2A 150 Collector-emitter saturationvoltage V CE(sat) IC =3A, IB =0.1A 1 V Transition frequency fT V CE =6V ,IC =50mA 150 MHz Out capacitance Cob V CB =20 V ,IE=0,f=1M H Z 50 pF CLASSIFICATION OF h FE Rank Q R S Range 230-380 340-600 560-800 2SD965 A (NPN ) 1. BASE 2.COLLECTO SOT -89 3.EMITTER

Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. 2SD965 A Typical Characteristics