2SD965A DGNJDZ

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TRANSISTOR (NPN)

FEATURES

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter Value Unit VCBO Collector-Base V oltage 40 V VCE O Collector-Emitter Voltage 30 V VEB O Emitter-Base V oltage 7 V IC Collector Curr ent -Continuous 5 A PC Collector Power Dissipation 750 mW Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Paramet er Symbol Test conditions M in T yp Max Unit Co llector-base breakdown voltage V(B R)CBO IC=0.1mA, IE= 0 40 V Co llector-emitter breakdown voltage V(B R)CEO IC= 1 mA. IB= 0 30 V Emitter-b ase breakdown voltage V( BR)EBO IE= 1 0μA, IC=0 7 V Co llector cut-off current ICB O V CB= 10V,IE= 0 0.1 μA Emitter cut-off current IEBO V EB=7 V, IC= 0 0.1 μA hFE(1) V CE= 2 V, IC= 1mA 200 hFE’(2) V CE= 2 V, IC = 500mA 230 800 DC current gain hFE(3) V CE= 2 V, IC = 2A 150 Co llector-emitter saturation voltage VCE (sat) I C=3 A, IB=0.1A 1 V T ransition frequency fT V CE=6 V, IC= 50mA 150 MHz Ou t capacitance Cob V CB=

20 V , IE=

0, f=1MHZ 50 pF CLASSIFICA TION OF h FE(2) R a n k Q R S Ra nge 230-380 340-600 560-800 SOT -89-3L . BASE 2. COLLECTOR 3. EMITTER RθJA T hermal Resistance From Junction To Ambient 167 ℃/W MARKING D965A SO T-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., SO T-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., SO T-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/4 www.dgnjdz.com

0.1 1 10 100 1000 200 400 600 800 1000 0 25 50 75 100 125 150 200 400 600 800 1000 0.1 1 10 100 1000 100 1000 0.001 0.01 0.1 1 100 1000 10000 0.1 1 10 100 1000 200 400 600 800 1000 1200 100 1000 0.0 0.5 1.0 1 .5 2.0 2.5 200 400 600 800 1000 β=30 VBE sat —— IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTO R CURREM T IC (mA) Ta=125 ℃ Ta=25℃ PC — — Ta AMBIENT TEMPERATURE Ta (℃) COLLECTOR POWER DISSIPATION PC (mW) 5000 50005000 Ta=125 ℃ Ta=25℃ β=30 COLLECTOR CURRENT IC (A) VCE sat — — IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREM T IC (mA) hFE — — IC Ta=125℃ Ta=25℃ DC CURRENT GAIN h FE COMM ON EMITTER VCE= 2V f=1MHz IE=0/IC=0 Ta=25 ℃ Cob/Cib — — VCB/VEB Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COLLECTOR CURRENT I C (mA) BASE-EMM ITER VOLT AGE VBE (mV) IC — — VBE Ta=25℃ Ta=125℃ COMM ON EMITTER VCE=2V Stat ic Char acter istic CO MMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EM ITTE R VOLTAGE VCE (V) 2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.4mA 0.6mA 0.8mA IB= 0.2mA Dongguan Nanjing Electronics Ltd. 2/4 www.dgnjdz.com

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com