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Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
5 A, 40 V
NPN Plastic Encapsulated Transistor Elektronische Bauelemente 17-Nov-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Audio amplifier Flasg unit of camera Switching circuit CLASSIFICATION OF hFE(2) Rank Q R S Range 230 - 380 340 - 600 560 - 800 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 30 V Emitter-Base Voltage V EBO 7 V Collector Current-Continuous I C 5 A Collector Power Dissipation P C 750 mW Junction & Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-base breakdown voltage V (BR)CBO 40 - - V I C=0.1mA, IE=0 Collector-emitter breakdown voltage V (BR)CEO 30 - - V I C=1mA, IB=0 Emitter-base breakdown voltage V (BR)EBO 7 - - V I E=10μA, IC=0 Collector cut-off current I CBO - - 0.1 μA V CB=10V, IE=0 Emitter cut-off current I EBO - - 0.1 μA V EB=7 V, IC=0 DC current gain hFE(1) - 200 - V CE=2V, IC= 1mA hFE(2) 230 - 800 V CE=2V, IC= 500mA hFE(3) 150 - - V CE=2V, IC= 2A Collector-emitter saturation voltage V CE(sat) - - 1 V I C=3A, IB= 0.1A Transition frequency f T - 150 - MHz V CE=6V, IC=50mA Output Capacitance C OB - - 50 pF V CB=20V, IE=0, f=1MHz REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.30 2.60 K 0.32 0.52 E 1.50 1.70 L 0.35 0.44 F 0.89 1.20 SOT-89 A E C DB KH F G LJ 1 2 3 B C E
NPN Plastic Encapsulated Transistor Elektronische Bauelemente 17-Nov-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES