2SD965A DAYA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

SOT-89 Plastic-Encapsulate Transistors 2SD 965A TRANSISTOR (NPN)

FEATURES

z Audio amplifier z Flash unit of camera z Switching circuit MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 30 V V EBO Emitter-Base Voltage 7 V I C Collector Current -Continuous 5 A P C Collector Power Dissipation 750 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =0.1mA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA. I B =0 30 V Emitter-base breakdown voltage V (BR)EBO I E = 10μA, I C =0 7 V Collector cut-off current I CBO V CB = 10V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V, I C =0 0.1 μA h FE(1) V CE = 2 V, I C =1mA 200 h FE’(2) V CE = 2V, I C = 500mA 230 800 DC current gain h FE(3) V CE = 2V, I C =2A 150 Collector-emitter saturation voltage V CE(sat) I C =3A, I B =0.1A 1 V Transition frequency f T V CE =6V, I C =50mA 150 MHz Out capacitance Cob V CB =20 V , I E =0, f=1MH Z 50 pF CLASSIFICATION OF h FE(2) R a n k Q R S Range 230-380 340-600 560-800 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER

T y p i c a l C h a r a c t e r i s t i c s 2 S D 9 6 5 A