2SD965-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low Collector-Emitter Saturation Voltage
  • Large Collector Power Dissipation and Current
  • Mini Power Type Package 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 5 A Collector Power Dissipation PC 750 mW Thermal Resistance From Junction To Ambient RθJA 167 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 40 V Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 7 Collector-base cut-off current ICBO VCB= 10 V , IE= 0 100 nA Emitter cut-off current IEBO VEB= 7V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=100mA 1 V Base - emitter saturation voltage VBE(sat) IC=3 A, IB=100mA 1.2 hFE(1) VCE= 2V, IC= 1mA 200 hFE(2) VCE= 2V, IC= 500mA 230 950 hFE(3) VCE= 2V, IC= 2A 150 Collector output capacitance Cob VCB= 20V, IE= 0,f=1MHz 50 pF Transition frequency fT VCE= 6V, IC= 50mA,f=200MHz 150 MHz DC current gain ■ Classification of hfe(2) Type 2SD965-Q-HF 2SD965-R-HF 2SD965-S-HF 2SD965-T-HF Range 230-380 340-600 560-800 560-950 Marking 965Q F 965R F 965S F 965T F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD965-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0.1 1 10 100 1 10 100 1000 100 1000 1 10 100 1000 1000 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.1 100 1000 10 100 100 1 10 100 1000 0.01 0.1 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 5000 Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) 500 f=1MHz IE=0/ IC=0 Ta=25 o C VCB/ VEBCob/ Cib — — BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ 2000 5000 IC VBEsat — — β=30 0.6 100 IChFE — — Ta=100 o C Ta=25 o C VCE=2V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 5000 BASE-EMMITER VOLTAGE VBE (mV) COLLCETOR CURRENT IC (mA) VCE=2V Ta=100 o C Ta=25℃ IC VBE — — 500 IC fT — — VCE=6V Ta=25 o C TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) 0.3 0.3 ICVCEsat — — COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) Ta=25℃ Ta=100℃ 5000 β=30 COMMON EMITTER Ta=25℃ 1.8mA 1.6mA 1.4mA 1.2mA 1mA 0.8mA 0.6mA 0.4mA IB=0.2mA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION Pc (W) Pc — — Ta NPN Transistors 2SD965-HF