Download PDF2SD965 YFWDIODE
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1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Features
- Low Collector-Emitter Saturation Voltage
- Large Collector Power Dissipation and Current
- Mini Power Type Package ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage V CBO Collector - Emitter Voltage V CEO Emitter - Base Voltage V EBO Collector Current - Continuous I C 5 A Collector Power Dissipation P C 750 mW Thermal Resistance From Junction To Ambient R θJA 167 ℃/W Junction Temperature T J 150 Storage Temperature Range T stg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage V CBO Ic= 100 μA， I E = 0 40 V Collector- emitter breakdown voltage V CEO Ic= 1 mA， I B = 0 20 Emitter - base breakdown voltage V EBO I E = 100μA， I C = 0 7 Collector-base cut-off current I CBO V CB = 10 V , I E = 0 100 nA Emitter cut-off current I EBO V EB = 7V , I C =0 100 Collector-emitter saturation voltage V CE(sat) I C =3 A, I B =100mA 1 V Base - emitter saturation voltage V BE(sat) I C =3 A, I B =100mA 1.2 h FE(1) V CE = 2V, I C = 1mA 200 h FE(2) V CE = 2V, I C = 500mA 230 950 h FE(3) V CE = 2V, I C = 2A 150 Collector output capacitance C ob V CB = 20V, I E = 0,f=1MHz 50 pF Transition frequency f T V CE = 6V, I C = 50mA,f=200MHz 150 MHz DC current gain ■ Classification of h fe(2) Type 2SD965-Q 2SD965-R 2SD965-S 2SD965-T Range 230-380 340-600 560-800 560-950 Marking 965Q 965R 965S 965T NPN Transistors Simplified outline(SOT-89) 1.Base 2.Collector 3.Emitter
2 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics 0.1 1 10 100 1 10 100 1000 100 1000 1 10 100 1000 1000 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.1 100 1000 10 100 100 1 10 100 1000 0.01 0.1 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 5000 C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) 500 f=1MHz I E =0/ I C T a =25 o C V CB / V EB C ob / C ib — — BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) T a =25 T a =100 2000 5000 I C V BEsat — — β=30 0.6 100 I C h FE — — T a =100 o C T a =25 o C V CE =2V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 5000 BASE-EMMITER VOLTAGE V BE (mV) COLLCETOR CURRENT I C (mA) V CE =2V T a =100 o C T a =25 I C V BE — — 500 I C f T — — V CE =6V T a =25 o C TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 0.3 0.3 I C V CEsat COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) T a =25 T a =100 5000 β=30 COMMON EMITTER T a =25 1.8mA 1.6mA 1.4mA 1.2mA 1mA 0.8mA 0.6mA 0.4mA I B =0.2mA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P c (W) P c —— T a
3 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Package Outline SOT-89 Summary of Packing Options Package Package Description Packing Quantity Industry Standard SOT-89 Tape/Reel,7”reel 1000 EIA-481-1 DIMENSIONS (mm are the original dimensions) w M e E HE B B 0 2 4 mm scale bp3 bp2 bp1 c D Lp A 1 2 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 HE Lp 4.25 3.75 e 3.0 w 0.13 1.5 1.2 0.8 bp2bp1 0.53 0.40 bp3 1.8 1.4