2SD965 JIANGSU

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Technical content

  1. BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD965 TRANSISTOR (NPN)

FEATURES

z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package 0$5.,1*: 965 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =10µA,I C =0 7 V Collector cut-off current I CBO V CB =10V,I E =0 0.1 µA Emitter cut-off current I EBO V EB =7V,I C =0 0.1 µA h FE(1) V CE =2V, I C =1mA 200 h FE(2) V CE =2V, I C =500mA 230 800 DC current gain h FE(3) V CE =2V, I C =2A 150 Collector-emitter saturation voltage V CE(sat) I C =3A,I B =0.1A 1 V Transition frequency f T VCE=6V,IC=50mA，f=200MHz 150 MHz Collector output capacitance C ob V CB =20V, I E =0, f=1MHz 50 pF CLASSIFICATION OF h FE RANK Q R S RANGE 230–380 340 –600 560 –800 Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 7 V I C Collector Current 5 A P C Collector Power Dissipation 750 mW R θJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1www.cj-elec.com C,Oct,2015

0.1 1 10 100 1 10 100 1000 100 1000 1 10 100 1000 1000 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.1 100 1000 10 100 100 1 10 100 1000 0.01 0.1 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 5000 C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) 500 f=1MHz I E =0/ I C T a =25 o C V CB / V EB C ob / C ib BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) T a =25 T a =100 2000 5000 I C V BEsat β=30 0.6 100 I C h FE T a =100 o C T a =25 o C V CE =2V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 5000 BASE-EMMITER VOLTAGE V BE (mV) COLLCETOR CURRENT I C (mA) V CE =2V T a =100 o C T a =25 I C V BE 500 I C f T V CE =6V T a =25 o C TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 0.3 0.3 I C V CEsat COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) T a =25 T a =100 5000 β=30 COMMON EMITTER T a =25 1.8mA 1.6mA 1.4mA 1.2mA 1mA 0.8mA 0.6mA 0.4mA I B =0.2mA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P c (W) P c —— T a Typical Characteristics www.cj-elec.com 2www.cj-elec.com C,Oct,2015

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 3www.cj-elec.com C,Oct,2015

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