Download PDF2SD965 HOTTECH
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Technical content
Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES
- Collector current up to 5A
- Collector-Emitter voltage up to 20V Marking:D965 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-BaseV oltage V CBO 40 V Collector-EmitterV oltage V CEO 20 V Emitter-Base V oltage V EBO 7 V CollectorCurrent-Continuous IC 3 A CollectorPower dissipation PC 0.75 W StorageTemp erature Tstg -55to +150 ELECTRICAL CHARACTERISTICS (@ Ta=25 unless otherwise specified) Parameter Symbol Testconditions M in Typ M ax U nit Collector-base breakdow n voltage V CBO IC =100μA, IE=0 40 V Collector-em itter breakdown voltage V CEO IC =1mA ,IB =0 20 V Emitter-base breakdow n voltage V EBO IE=10μA, IC =0 7 V Collector cut-offcurrent ICBO V C B =10V ,IE=0 0.1 uA Emittercut-off current IEBO V EB =7V ,IC =0 0.1 uA Collector-em ittersaturation voltage V CE(sat) IC /IB =3A/0.1A 1 V DC currentgain(note) hFE V C E=2V ,IC =1mA 200 V C E=2V ,IC =0.5A 230 800 V C E=2V ,IC =0.1A 150 Current gainbandwidth product fT V C E=6V ,IC =50mA 150 MHz OutputCapacitance C ob V C B =20V ,f=1MHz ,IE=0A 50 pF CLASSIFICATION OF h FE Rank Q R S Range 230 -380 340-600 560-800 2SD965 (NPN ) 1. BASE 2.COLLECTO SOT -89 3.EMITTER
Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. 2SD965 Typical Characteristics