2SD965 HTSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

  1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN)

FEATURES

z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =10µA,I C =0 7 V Collector cut-off current I CBO V CB =10V,I E =0 0.1 µA Emitter cut-off current I EBO V EB =7V,I C =0 0.1 µA h FE(1) V CE =2V, I C =1mA 200 h FE(2) V CE =2V, I C =500mA 230 800 DC current gain h FE(3) V CE =2V, I C =2A 150 Collector-emitter saturation voltage V CE(sat) I C =3A,I B =0.1A 1 V Transition frequency f T VCE=6V,IC=50mA，f=200MHz 150 MHz Collector output capacitance C ob V CB =20V, I E =0, f=1MHz 50 pF CLASSIFICATION OF h FE RANK Q R S RANGE 230–380 340 –600 560 –800 Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 7 V I C Collector Current 5 A P C Collector Power Dissipation 750 mW R θJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.htsemi.comsemiconductor JinYu 2SD965