2SD965 WEITRON

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Technical content

hpp://www.weitron.com.tw 1/2 01-Sep-09 NPN Transistor TO-92 2SD965WEITRON Lead(Pb)-FreeP b 1. EMITTER 2. COLLECTOR 3. BASE BASE EMITTER COLLECTOR FEATURES : * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) SymbolParameter Value Units VCBOCollector-Base Voltage 42 V VCEOCollector-Emitter Voltage 22 V VEBOEmitter-Base Voltage 6 V ICCollector Current -Continuous 5 A PCCollector Power Dissipation 750 mW TJJunction Temperature 150 ℃ TstgStorage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA hFE(1) VCE=2V, IC= 0.15 mA 150 hFE(2) VCE= 2V,IC = 500 mA 340 2000 DC current gain hFE(3) VCE=2V, IC = 2A 150 Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA 0.35 V Transition frequency fT VCE=6V, IC=50mA,f=30MHz 150 MHz CLASSIFICATION OF hFE(2) V T R knaR Range 340-600 560-950 900-2000

hpp://www.weitron.com.tw Ratings and Characteristic Curves 2SD965 01-Sep-09