2SD965 DCCOM

Document overview

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use as AF output amplifier and flash unit. Pinning 1 = Emitter 2 = Collector 3 = Base TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 7 V Collector Current IC 5 A Total Power Dissipation PD 750 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Rank Q R S Range 230~380 340~600 560~800 Classification of hFE1 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 7 - - V IE=10µA, IC=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=10V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=7V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - 0.35 1 V IC=3A, IB=100mA DC Current Gain(1) hFE1 230 - 800 - IC=0.5A, VCE=2V hFE2 150 - - - IC=2A, VCE=2V Transition Frequency fT - 150 - MHz IE=50mA, VCE=6V Output Capacitance Cob - - 50 pF VCB=20V, f=1MHz, IE=0

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%