Download PDF2SD0965 PANASONIC
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1Publication date: January 2003 SJC00200BED 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features
- Low collector-emitter saturation voltage VCE(sat)
- Satisfactory operation performances at high efficiency with the low- voltage power supply. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 40 V Collector-emitter voltage (Base open) V CEO 20 V Emitter-base voltage (Collector open) V EBO 7V Collector current I C 5A Peak collector current I CP 8A Collector power dissipation P C 750 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = 1 mA, IB = 02 0 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 07V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 01 µA Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 0.1 µA Forward current transfer ratio h FE1 * VCE = 2 V, IC = 0.5 A 230 600 hFE2 VCE = 2 V, IC = 1 A 150 Collector-emitter saturation voltage V CE(sat) IC = 3 A, IB = 0.1 A 0.28 1.00 V Transition frequency f T VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz Collector output capacitance C ob VCB = 20 V, IE = 0, f = 1 MHz 26 50 pF (Common base, input open circuited) ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 5.0±0.2 0.7±0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 0.45+0.15 –0.1 2.5 12 3 +0.6 –0.2 4.0±0.2 5.1±0.212.9±0.5 2.3±0.2 0.7±0.2 1: Emitter 2: Collector 3: Base Rank Q R hFE1 230 to 380 340 to 600 Note) The part number in the parenthesis shows conventional part number.
2 SJC00200BED
VCE(sat) IC VBE(sat) IC hFE IC PC Ta IC VCE IC VBE fT IE Cob VCB Safe operation area 0 160 40 120 80 14020 100 60 1 000 800 600 400 200 Collector power dissipation PC (mW) Ambient temperature Ta (°C) 2.4 2.0 1.6 1.2 0.8 0.4 Ta = 25°C IB = 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA Collector current IC (A) Collector-emitter voltage VCE (V) VCE = 2 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 10 0.001 0.01 0.1 Ta = 75°C 25°C −25°C IC / IB = 30 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) 0.01 0.1 1 10 0.01 0.1
100 IC / IB = 30
Ta = −25°C 25°C 75°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) 0.01 0.1 1 10 600 500 400 300 200 100 VCE = 2 V Ta = 25°C Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (A) 400 300 100 200 VCB = 6 V Ta = 25°C Transition frequency fT (MHz) Emitter current IE (A) 1 10 100 100 IE = 0 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) 0.1 1 10 100 0.01 0.1
100 Single pulse
Ta = 25°C t = 10 ms t = 1 s ICP IC Collector current IC (A) Collector-emitter voltage VCE (V)
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