Download PDF2SD965_V01 DGNJDZ
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
-89-3L 1. BASE 2. COLLECTOR 3. EMITTER SOT -89-3L Plastic-Encapsulate Transistors 2SD965 TRANSIST OR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage z Large Collector Power Dissipation and Current z Mini Power Type Package 0$5.,1*: 965 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) ELECTRICAL CHARACTERISTICS (T a=25℃ unless other wise specified) Parameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO I C= 100µA,IE= 0 40 V Co llector-emitter breakdown voltage V(B R)CEO IC=1 mA,IB= 0 20 V Emitter-b ase breakdown voltage V( BR)EBO I E= 10µA,IC=0 7 V Co llector cut-off current ICB O V CB= 10V,IE= 0 0.1 µA Emitter cut-off current IEBO V EB=7 V,IC= 0 0.1 µA hFE(1) V CE=2 V, IC= 1mA 200 hFE(2) V CE=2 V, IC= 500mA 230 800 DC cu rrent gain hFE(3) V CE=2 V, IC= 2A 150 Co llector-emitter saturation voltage VCE (sat) I C=3 A,IB=0 .1A 1 V T ransition frequency fT VCE= 6V,IC=50mA，f=200MHz 150 MHz Co llector output capacitance Cob V CB= 20V, IE= 0, f=1MHz 50 pF CLASSIFICA TION OF hFE(2) RA NK Q R S RA NGE 230–380 340– 600 560 –800 Symbol Para meter Value Unit VCBO Coll ector-Base Voltage 40 V VCE O Coll ector-Emitter Voltage 20 V VEB O Emitter-Base V oltage 7 V IC Coll ector Current 5 A PC Coll ector Power Dissipation 750 mW RθJA T hermal Resistance From Junction To Ambient 167 ℃/W Tj Junctio n Temperature 150 ℃ Tst g S torage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Oct,2015www.dgnjdz.com NANJING INTERNATIONAL GROUP CO., LTD. All data s heet.com
0.1 1 10 100 1 10 100 1000 100 1000 1 10 100 1000 1000 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.1 100 1000 10 100 100 1 10 100 1000 0.01 0.1 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 5000 Cob Cib CAPACIT ANCE C (pF) REVERSE VO LTAGE V (V) 500 f=1M Hz IE=0/ IC=0 Ta=25 o C VCB/ VEBCob/ Cib — BASE- EMITTER SATURATION VOLTAGE VBEs at (mV) COLLECTOR CURRENT IC (m Ta=25℃ Ta=100℃ 2000 5000 IC VB Esat — β=30 0.6 100 IChFE — Ta=100 o C Ta=25 o C VCE=2V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (m 5000 BASE- EMMITER VOLTAGE VBE (m COLLCETOR CURRENT IC (mA) VCE=2V Ta=100 o C Ta=25℃ IC VBE — 500 IC fT — VCE=6V Ta=25 o C TRA NSITION FREQUENCY fT (MHz COLLECTOR CURRENT IC (m 0.3 0.3 ICVC Esat — COLLECTOR CURRENT IC (m COLLECTOR-EMITTER SATURATION VO LTAGE VCE sat (V) Ta=25℃ Ta=100℃ 5000 β=30 C OMMON EMITTER Ta=25℃ 1.8m A 1.6m A 1.4m A 1.2m A A 0.8m A 0.6m A 0.4m A IB=0.2m A S tatic Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EM ITTER VOLTAGE VCE (V) AM BIENT TEMPERATURE Ta ( CO LLECTOR POWER DISSIPATION Pc (W) Pc — — T a T ypical Characteristics www.cj-elec.com 2 C,Oct,2015www.dgnjdz.com All data s heet.com
A 1. 400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 3 C,Oct,2015www.dgnjdz.com All data s heet.com
www.cj-elec.com 4 C,Oct,2015www.dgnjdz.com All data s heet.com