2SD882-126_15 KEXIN
Document overview
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Technical content
Features
Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VegatloVesaBotrotcelloC CBO 40 V VegatloVrettimEotrotcelloC CEO 30 V VegatloVesaBotrettimE EBO 6 V Collector Current to Continuous IC 3 A PnoitapissiDrotcelloC c 1 TerutarepmeTnoitcnuJ J 150 TerutarepmeTegarotS stg -55 to 150 Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnoctseTlobmySretemaraP Collector-base breakdown voltage VCBO Ic=100uA ,IE V040= Collector-emitter breakdown voltage VCEO IC= 10 mA , IB V030= Emitter-base breakdown voltage VEBO IE= 100 uA ,IC V60= Itnerrucffo-tucrotcelloC CBO VCB=40 V , IE Au10= Itnerrucffo-tucrotcelloC CEO VCE=30 V , IB Au010= Itnerrucffo-tucrettimE EBO VEB=6V , IC Au10= VCE= 2V, IC 00406A1= VCE=2V, IC= 100mA 32 Collector-emitter saturation voltage VCE(sat) IC=2A, IB V5.0A2.0= Base-emitter saturation voltage VBE(sat) IC=2A, IB V5.1A2.0= fycneuqerfnoitisnarT T VCE=5 V, IC=0.1mA,f = 10MHz 50 MHz hniagtnerrucCD FE ■ Classification of hfe(1) NPN Transistors Type 2SD882-R 2SD882-Q 2SD882-P 2SD882-E Range 60-120 100-200 160-320 200-400 W ø3.20± 0.10 0.75± 0.10 0.75± 0.10 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 1.60± 0.10 11.00± 0.20 3.9±0 0.10 14.20MAX 16.10± 0.20 13.06± 0.30 1.75± 0.20 (0.50)(1.00) 0.50 +0.10 –0.05 TO-126 3. Emitter 1. Base 2. Collector Unit:mm 1 2 3
www.kexin.com.cn2 Transistors 2SD882 NPN Transistors ■ Typical Characterisitics