2SD875-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Large collector power dissipation PC.
  • High collector to emitter voltage VCEO.
  • Complimentary to 2SB767-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 Collector Current - Pulse ICP 1 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 80 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 60V , IE= 0 100 Emitter cut-off current IEBO VEB= 4V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=300 mA, IB=30mA 0.2 0.4 Base - emitter saturation voltage VBE(sat) IC=300 mA, IB=30mA 0.85 1.2 hFE(1) VCE= 10V, IC= 150mA 130 330 hFE(2) VCE= 5V, IC= 500mA 50 100 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 11 pF Transition frequency fT VCE= 10V, IE= -50mA,f=200MHz 120 MHz DC current gain V nA V ■ Classification of hfe(1) Type 2SD875-R-HF 2SD875-S-HF Range 130-220 185-330 Marking XR F XS F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD875-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics PC IaT — C — VCE VCE(sat) — I C VBE(sat) — I C hFE — I C fT — I E Cob — VCB Area of safe operation (ASO) 0610 40 12080 14020 10060 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) 010 82 64 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (A) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3 IC/IB=10 25˚C –25˚C Ta=75˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3

100 IC/IB=10

Ta=–25˚C 25˚C 75˚C Collector current IC (mA) Base to emitter saturation voltage VBE(sat) (V) 1 10 100 10003 30 300 300 250 200 150 100 VCE=10V Ta=75˚C 25˚C –25˚C Collector current IC (mA) Forward current transfer ratio hFE 200 160 120 VCB=10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3

10 Single pulse

TC=25˚C DC t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) NPN Transistors 2SD875-HF