2SB767 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Marking symbol : C 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 n Features l Large collector power dissipation PC . l High collector to emitter voltage VCEO . l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –80 –80 – 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –20V, IE = 0 IC = –10mA, IE = 0 IC = –100mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –150mA*2 V CE = –5V , IC = –500mA*2 IC = –300mA, IB = –30mA*2 IC = –300mA, IB = –30mA*2 V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –80 –80 typ 100 – 0.2 – 0.85 120 max – 0.1 330 –0.4 –1.2 Unit mA V V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 Marking Symbol CQ CR CS * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *2 Pulse measurement
0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C IB=–10mA –1mA –2mA –3mA –4mA –5mA –6mA –7mA –8mA –9mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 300 250 200 150 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 Single pulse Ta=25˚C t=10ms t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB Area of safe operation (ASO)