2SD874A-HF

2SD874A-HF_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
• Complimentary to 2SB766A-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 2 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 100 Emitter cut-off current IEBO VEB= 4V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50mA 0.4 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50mA 1.2 hFE(1) VCE= 10V, IC= 500mA 85 340 hFE(2) VCE= 5V, IC= 1A 50 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 20 pF Transition frequency fT VCE= 10V, IC= 50mA,f=200MHz 200 MHz DC current gain V nA V ■ Classification of hfe(1) Type 2SD874A-Q-HF 2SD874A-R-HF 2SD874A-S-HF Range 85-170 120-240 170-340 Marking YQ F YR F YS F Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 A Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V
• Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD874A-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 100 1000 0.1 1 10 100 1000 300 600 900 1200 0 25 50 75 100 125 150 100 200 300 400 500 600 0.1 1 10 100 1000 100 1000 1 10 100 1000 100 1000 300 600 900 1200 0.1 100 1000 0 2 4 6 8 10 12 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 11 0 0.1 100 1000 13 0.4 2.38 70 fT — — IC COMMON EMITTER VCE= 10V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) β=10 ICVBEsat — — BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC — — Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 ICVCEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) IChFE — — Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 10V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC — — VBE T a=25℃ Ta=100℃ COMMON EMITTER VCE=10V Static Characteristic COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 1.0mA 1.5mA 2.0mA IB=0.5mA 0.3 Cob Cib f=1MHz IE=0/IC=0 Ta=25 ℃ CAPACITANCE C (pF) REVERSE VOLTAGE V (V) Cob/Cib — — VCB/VEB NPN Transistors 2SD874A-HF