2SD780-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors ■ Features
- High DC current gain
- Complimentary to 2SB736-HF 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 300 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=300 mA, IB=30mA 0.15 0.6 Base - emitter saturation voltage (Note.1) VBE(sat) IC=300 mA, IB=30mA 1.2 Base - emitter voltage (Note.1) VBE VCE= 6V, IC=10mA 600 645 700 hFE(1) VCE= 1V, IC= 50mA 110 200 400 hFE(2) VCE= 2V, IC= 300mA 30 Collector output capacitance Cob VCB= 6V, IE=0,f=1MHz 7 pF Transition frequency fT VCE= 6V, IE= -10mA 140 MHz DC current gain (Note.1) V uA V Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) mV
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Type 2SD780-DW1-HF 2SD780-DW2-HF 2SD780-DW3-HF 2SD780-DW4-HF 2SD780-DW5-HF Range 110-180 135-220 170-270 200-320 250-400 Marking DW1 F DW2 F DW3 F DW4 F DW5 F NPN Transistors 2SD780-HF
www.kexin.com.cn2 Transistors ■ Typical Characterisitics NPN Transistors 2SD780-HF
www.kexin.com.cn 3 Transistors ■ Typical Characterisitics NPN Transistors 2SD780-HF