2SD661 PANASONIC

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2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification n Features l Low noise voltage NV . l High foward current transfer ratio hFE . l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW 2SD661 2SD661A 2SD661 2SD661A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage Symbol ICBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT NV Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA IC = 100mA, IB = 10mA V CB = 10V , IE = –2mA, f = 200MHz V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 210 typ 200 max 0.1 650 150 Unit mA mA V V V V MHz mV *hFE Rank classification Rank R S T hFE 210 ~ 340 290 ~ 460 360 ~ 650 2SD661 2SD661A 2SD661 2SD661A

Transistor 2SD661, 2SD661A PC — Ta I C — V CE IC — IB IB — V BE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 160 120 100 140 Ta=25˚C IB=350mA 300mA 250mA 200mA 150mA 100mA 50mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 160 120 100 140 VCE =5V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) 800 600 200 500 700 400 100 300 VCE =5V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA) 120 100 VCE =5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 720 600 480 360 240 120 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 500 400 300 200 100 VCB =5V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 0.1 1 10 1000.3 3 30 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)

Transistor 2SD661, 2SD661A NV — V CE NV — V CE NV — I C NV — I C NV — R g NV — R g 1 3 10 30 100 160 120 100 140 IC =1mA G V=80dB Function=FLAT 4.7kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV ) 1 3 10 30 100 300 240 120 180 IC =1mA G V=80dB Function=RIAA 4.7kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV ) 0.01 0.03 0.1 0.3 1 160 120 100 140 VCE =10V G V=80dB Function=FLAT 4.7kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 0.01 0.03 0.1 0.3 1 300 240 120 180 VCE =10V G V=80dB Function=RIAA 4.7kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 1 3 10 30 100 160 120 100 140 VCE =10V G V=80dB Function=FLAT 0.1mA IC =1mA 0.5mA Signal source resistance Rg (kW ) Noise voltage NV (mV ) 1 3 10 30 100 300 240 120 180 VCE =10V G V=80dB Function=RIAA 0.1mA IC =1mA 0.5mA Signal source resistance Rg (kW ) Noise voltage NV (mV )