2SD639

2SD638 PANASONIC

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Technical content

2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 n Features l Low collector to emitter saturation voltage VCE(sat). l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 0.5 600 150 –55 ~ +150 Unit V V V A A mW 2SD638 2SD639 2SD638 2SD639 n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) fT C ob Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 10mA V CE = 10V , IC = 500mA*2 IC = 300mA, IB = 30mA V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min typ 160 0.35 200 max 0.1 340 0.6 Unit mA mA V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 *2 Pulse measurement 2SD638 2SD639 2SD638 2SD639

Transistor 2SD638, 2SD639 PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB ICEO — Ta 0 200 16040 120 80 800 600 200 500 700 400 100 300 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 02 0 1641 2 8 800 600 200 500 700 400 100 300 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 01 0 826 4 800 600 200 500 700 400 100 300 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 200 16040 120 80 102 103 104 VCE =10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C)