2SB633P SANYO

Document overview

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Technical content

PNP / NPN Epitaxial! Planar Silicon Transistors Oye SANYO 85V / 6A, AF 35 to 45W Output Applications es Features Package Dimensions + High breakdown voltage, VCEO 85V, unit : mm high current 6A. 2010C + AF 35 to 45W output. [288633P / 2SD613P] 102 $3.6) 5A 4 Ross . | | « Tz] 08 | 04 {| 1: Base 123. 2: Collector tee ae 3: Emitter Specifications Bats (_): 2SB633P 258 ‘ SANYO : TO-220 Absolute Maximum Ratings at Ta=25°C. [Parameter Symmbot_[Gonditions Ratings Unt] | Gollectorto-Basovotage | Vos fw | Gollectorto-EmiterVotage | vceo [es || ps |v | poe | | Collector Curent (Pulse) | ce ft | Collector Dissipation | Pg toe ww | Junetion Temperature co | [stage empeme | taf ago] Electrical Characteristics at Ta=25°C Pe i} ee om | mee | | Collector Cutoff Curent topo | Vopet Movoto [miter cust Guren ——~| tego | Veastauio-0 i ‘Continued on next page.

1 Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bidg.. 1-10, 1 Chom: nO, Taito-ku, TOKYO, 110-8534 JAPAN 13001 TS IM TA-3082 No.6662-1/4

Continued from preceding page. ee ed [eccumnan | eat | Gain-Bandwidth Products| sft (| Vce=C)VIciA || Te [ouput capactanco | eo —.veasct0w iste rsno | | Collectorto-Emitter Saturation Voltage | Voetsa) | Ic=(-MAipO4A || ToT | [Bese vole [Yee | Woecistesiqna ft ote — a —— a [ Emitterto-Base Breakdown Voltage | WBRyEBO | Ie=)mAIc-o || TT [Hann time te | Sen ponies asics [as] [Faitime - Ss S| See specifedtestoiout. |S stoggoso | | us| [Senger | oy [Se estore | ftasnse | [ie | *: The 2SB633P / 2SD613P are classified by 1A hfe as follows : [rx b [ | F —_] [hee | “aie 120 | 019200 | Tanto] Swicthing Time Test Circuit nM Pw=20)s qe OUTPUT INPUT 200VR 20a sia Voc=20V 4pF 4pF Vpe=-2V 10lgi= -10lge=ic=1A For PNP, the polarity is reversed.

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